Integrated Metrology for Selective SAM Film Deposition
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Solution Overview
Problem
As transistors become smaller, achieving precise patterned feature resolution and cost-effective scaling becomes increasingly challenging due to variability in patterning processes, particularly with the introduction of EUV technology, necessitating the transition from overlay-driven to self-aligned patterning and the need for reduced variability and enhanced process control in selective deposition of thin films.
Innovation Solution
A substrate processing tool and method that integrates substrate processing and metrology, utilizing a self-assembled monolayer (SAM) for selective film deposition, with AI analysis to predict film thickness and selectivity, and sequential processing steps involving film deposition and removal, facilitated by a multi-chamber system with metrology modules for real-time characterization and adjustment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If self-aligned patterning is implemented to achieve precise patterned feature resolution, then manufacturing precision is improved, but device complexity increases due to the need for selective deposition processes
Solution Approach 1:
A self-assembled monolayer (SAM) is introduced as an intermediary layer between the substrate and the film deposition process. The SAM selectively forms on specific material layers (e.g., dielectric layers) while avoiding others (e.g., metal layers), enabling area-selective deposition without requiring complex mask or overlay processes. This intermediary layer simplifies the overall patterning complexity while maintaining high manufacturing precision.
Solution Approach 2:
The invention applies local quality by creating different surface properties in different regions of the substrate. The SAM forms selectively on specific material layers based on their chemical composition and surface energy characteristics. This allows the deposition process to target only specific areas (e.g., gap regions between transistors) while leaving other areas unchanged, achieving precise patterned feature resolution through localized chemical affinity rather than complex global patterning.
2Manufacturing precision
If multiple sequential processing steps are used to achieve selective film formation, then manufacturing precision is improved, but productivity decreases due to repeated processing cycles
Solution Approach 1:
The self-assembled monolayer formation is performed as a preliminary action before the main film deposition process. The SAM spontaneously forms on the substrate surface through chemical self-assembly, creating a selective template that guides subsequent film deposition. This preliminary preparation eliminates the need for repeated mask alignment and pattern transfer steps, as the selective deposition occurs in a single continuous process, thereby improving productivity while maintaining manufacturing precision.
Solution Approach 2:
The invention enables continuous useful action by maintaining the SAM layer throughout the film deposition process. Rather than requiring repeated formation and removal cycles, the SAM persists during the entire deposition sequence, continuously guiding selective film formation. This eliminates idle time between processing steps and allows for uninterrupted deposition, improving throughput while ensuring consistent selective film formation precision.
3Manufacturing precision
If AI analysis and real-time metrology are integrated to enhance process control, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
Real-time metrology modules are integrated into the processing chambers to provide continuous feedback on film thickness, deposition rate, and selective deposition quality. This feedback is fed to AI algorithms that dynamically adjust deposition parameters (e.g., precursor flow rates, plasma power, temperature) to maintain optimal process conditions. The closed-loop feedback system enhances manufacturing precision by compensating for process variations in real-time, while the automation of control reduces the operational complexity for users.
Solution Approach 2:
The integrated AI and metrology system enables self-service process control, where the system automatically monitors, analyzes, and adjusts deposition parameters without external intervention. The AI algorithms process metrology data in real-time and autonomously optimize process conditions, eliminating the need for manual process tuning and reducing the complexity of system operation. The system serves itself by continuously self-diagnosing and self-correcting process deviations, maintaining high manufacturing precision with minimal user involvement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise and cost-effective selective film formation on substrates by improving deposition selectivity and process control, allowing for enhanced scaling and reduced variability in advanced technology nodes.
Implementation Method 1
forming a self-assembled monolayer (SAM) on the substrate
Implementation Method 2
forming a self-assembled monolayer (SAM) on the substrate
Implementation Method 3
depositing a film selectively on the first material layer and film nuclei on the self-assembled monolayer
Implementation Method 4
removing the film nuclei from the self-assembled monolayer by etching
Data Source
AI summary
A substrate processing method includes (a) providing a substrate in a substrate processing tool, the substrate containing an exposed surface of a first material layer and an exposed surface of a second material layer; (b) forming a self-assembled monolayer (SAM) on the substrate in a first substrate processing chamber (SPC); (c) transferring the substrate from the first SPC through a substrate transfer chamber to a second SPC; (d) depositing a film selectively on the first material layer and film nuclei on the SAM in the second SPC; (e) transferring, after selectively depositing the film on the first material layer, the substrate from the second SPC through the substrate transfer chamber to a third SPC; (f) removing the film nuclei from the SAM by etching in the third SPC; and repeating (b), (c), (d), (e) and (f) sequentially at least once.