Integrated Optoelectronic Semiconductor Chip with Internal Detection Region

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In optoelectronic components like light emitting diodes, aging effects lead to changes in emission characteristics, making it difficult for external photodiodes to monitor and control the output of individual LEDs efficiently, especially in large arrays.

Innovation Solution

An optoelectronic semiconductor chip with integrated detection and emission regions, where the detection region is electrically conductively connected to an additional contact, allowing for internal monitoring of emission behavior without the need for a separate photodiode, and produced by forming recesses in the semiconductor layer sequence and connecting layers to facilitate both regions on a carrier.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If external photodiodes are used to monitor emission characteristics, then emission monitoring capability is provided, but device complexity and cost increase significantly

Engineering Contradiction:
Improveemission monitoring capabilityVSAvoiddevice complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent combines the emission function and detection function into a single semiconductor chip. The semiconductor body contains both an emission region with active layer for generating radiation and a detection region with additional contact for monitoring radiation, eliminating the need for separate external photodiodes and reducing system complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The semiconductor chip serves multiple functions: it generates radiation through the emission region and simultaneously detects radiation through the detection region with additional contact. This multi-functional design allows a single component to replace what would traditionally require separate emission and detection devices.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If external photodiodes are used for monitoring, then emission control is possible, but the number of components and connections increases

Engineering Contradiction:
Improveemission constancyVSAvoidnumber of components
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The detection region is integrated directly into the semiconductor body on the same chip as the emission region. The additional contact provides direct electrical access to the detection region, enabling monitoring without external photodiodes and reducing the number of components and connections required.

Inventive Principle:
Principle #5Merging (Combining)

3Measurement precision

If separate photodiodes are used for each LED, then individual monitoring is achieved, but manufacturing cost and complexity increase

Engineering Contradiction:
Improveindividual monitoring capabilityVSAvoidmanufacturing simplicity
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

Both emission and detection regions are fabricated using the same semiconductor layer sequence in a single integrated chip. The additional contact is formed during the same manufacturing process, allowing individual monitoring capability to be achieved without requiring separate photodiode devices and simplifying the manufacturing process.

Inventive Principle:
Principle #5Merging (Combining)

4Measurement precision

If external photodiodes are positioned away from emission regions, then optical interference is minimized, but monitoring accuracy decreases

Engineering Contradiction:
Improvemonitoring accuracyVSAvoidextraneous radiation impact
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The detection region is positioned adjacent to the emission region on the same chip, with the additional contact providing localized electrical access. This close integration allows the detection region to monitor the specific emission characteristics of the neighboring emission region with high accuracy, while the localized configuration minimizes exposure to extraneous radiation compared to distant external photodiodes.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances the reliability and constancy of emission by allowing close monitoring of emission behavior, reducing the need for external photodiodes and minimizing the impact of extraneous radiation, while simplifying production by using the same semiconductor layer sequence for both regions.

Implementation Method 1

an active region arranged between a first semiconductor layer and a second semiconductor layer and provided in the emission region to generate radiation

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

the detection region electrically conductively connects to an additional contact, allowing for internal monitoring of emission behavior

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS8878227B2Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips
Publication Date: 2014.11.04 OSRAM OLED
  • US8878227B2 patent drawing
  • US8878227B2 patent drawing
  • US8878227B2 patent drawing

AI summary

An optoelectronic semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, the semiconductor body arranged on the carrier wherein an emission region and a detection region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and provided in the emission region to generate radiation; the first semiconductor layer is arranged on the side of the active region facing away from the carrier; and the emission region has a recess extending through the active region.