Integrated PEALD PPECVD Etching Apparatus
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Solution Overview
Problem
Conventional PEALD/PPECVD processes for forming films on patterned surfaces are inefficient due to the need for separate deposition and etching apparatuses, leading to high intermediate times for substrate transfer and suboptimal processing efficiency.
Innovation Solution
A processing apparatus that combines both deposition and etching sessions within the same chamber, utilizing in situ plasma etching and distinct exhaust ports for each process, allowing for repeated cycles of film deposition and etching to form target layers efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate deposition and etching apparatuses are used, then each process can be performed with dedicated optimization, but processing time increases due to substrate transfer between apparatuses
Solution Approach 1:
The patent combines deposition and etching processes into a single integrated apparatus. The reaction chamber can perform both PEALD/PPECVD deposition sessions and plasma etching sessions without requiring substrate transfer to a separate apparatus, thereby eliminating transfer time while maintaining process quality.
Solution Approach 2:
The reaction chamber is designed with multi-functionality to perform both deposition and etching operations. By configuring the chamber to support different gas flows, pressure conditions, and power modes, a single apparatus achieves universal capability for both process types, eliminating the need for separate dedicated apparatuses.
2Loss of time
If a deposition apparatus is used for etching, then substrate transfer time is reduced, but processing efficiency decreases due to suboptimal etching performance
Solution Approach 1:
The apparatus employs dynamic configuration capabilities where reaction chamber parameters such as gas flow rates, pressure levels, and RF power modes can be adjusted between deposition and etching sessions. This dynamic adaptability allows the same chamber to optimize performance for each process type sequentially, maintaining high processing efficiency while eliminating substrate transfer.
3Reliability
If multiple exhaust ports are used for different processes, then process contamination is reduced, but device complexity increases
Solution Approach 1:
The exhaust system is segmented into multiple independent exhaust ports, with at least one exhaust port dedicated to deposition processes and another dedicated to etching processes. This segmentation prevents cross-contamination between processes by providing separate evacuation pathways, while the modular design keeps the added complexity manageable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integrated approach significantly reduces processing time by eliminating the need for substrate transfer between apparatuses, achieving high efficiency in both deposition and etching sessions, comparable to or exceeding the performance of dedicated apparatuses.
Implementation Method 1
depositing a film by plasma enhanced atomic layer deposition (PEALD)
Implementation Method 2
pulsed plasma enhanced chemical vapor deposition (PPECVD)
Implementation Method 3
the etching can be in situ plasma etching (etching gas is excited in the reactor)
Data Source
AI summary
A method of forming layers of film on a patterned surface, including depositing a film on the patterned surface during a PEALD/PPECVD process in a processing apparatus and etching the film during the etching process in the processing apparatus.