Integrated Power Module with TSV Contacts for Semiconductor Packaging

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Solution Overview

Problem

Integrating diverse circuit elements into a single chip or package is challenging due to differing power requirements, leading to inefficient power consumption and increased space usage with long power supply lines and voltage regulators.

Innovation Solution

Incorporating a power module with through silicon via (TSV) contacts to directly supply power to the die or dies, reducing the need for long power supply lines and voltage regulators, and enabling a more compact design compatible with 2.5D and 3D IC packaging.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If long power supply lines and voltage regulators are used to provide power to different devices, then power supply coverage is improved, but power consumption and chip/package space increase

Engineering Contradiction:
Improvepower supply coverageVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The invention divides the power supply system into multiple independent power modules, each serving specific devices or circuit blocks. Instead of using a single centralized power supply with long distribution lines, the power supply function is segmented into discrete modules placed close to the devices they serve, eliminating the need for extensive power distribution networks while reducing overall power consumption.

Inventive Principle:
Principle #1Segmentation

2Reliability

If long power supply lines and voltage regulators are used to provide power to different devices, then power supply coverage is improved, but chip/package space increases

Engineering Contradiction:
Improvepower supply coverageVSAvoidchip/package space
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The power supply system is segmented into multiple compact modules distributed across the chip or package. Each module serves a localized area, eliminating the need for long power supply lines that would consume significant space. The segmented approach allows for more efficient space utilization while maintaining comprehensive power supply coverage.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention transitions from a planar power distribution approach to a three-dimensional configuration by stacking power modules vertically or arranging them in multiple layers. This dimensional change allows power modules to be positioned close to devices without increasing the lateral footprint of the chip or package, effectively reducing the area occupied by power supply infrastructure.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Adaptability or versatility

If additional voltage regulators or charge pumps are employed to cater for different circuits, then different power requirements are met, but device complexity increases

Engineering Contradiction:
Improvepower requirement compatibilityVSAvoidcircuit complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The power modules are designed with universal functionality to handle multiple types of power requirements. Each module can operate as a voltage regulator, charge pump, or other power management function depending on the specific needs of the connected devices. This multi-functionality reduces the need for specialized components for each circuit type, thereby simplifying the overall device complexity while maintaining adaptability to different power requirements.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS8716856B2Device with integrated power supply
Publication Date: 2014.05.06 GLOBALFOUNDRIES SINGAPORE PTE LTD
  • US8716856B2 patent drawing
  • US8716856B2 patent drawing
  • US8716856B2 patent drawing

AI summary

Semiconductor devices and methods for forming a semiconductor device are disclosed. The semiconductor device includes a die. The die includes a die substrate having first and second major surfaces. The semiconductor device includes a power module disposed below the second major surface of the die substrate. The power module is electrically coupled to the die through silicon via (TSV) contacts.