Integrated RC Snubber Semiconductor Structure for Peak Voltage Damping
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Solution Overview
Problem
The integration of RC snubbers with semiconductor devices is currently limited by the need for additional chip area and increased process costs due to their external placement on printed circuit boards, which hinders device miniaturization and efficiency in managing electromagnetic interference and peak voltage stress.
Innovation Solution
A semiconductor structure and manufacturing method that integrates the RC snubber into the front-end process of semiconductor manufacturing, forming the RC snubber structure in conjunction with the electrode structure within the substrate, reducing the total device surface area and process costs by eliminating the need for separate placement on a printed circuit board.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If RC snubber is placed externally on PCB adjacent to switching device, then effective voltage management and EMI control are achieved, but additional chip area is occupied and total device surface area increases
Solution Approach 1:
The patent merges the RC snubber circuit with the semiconductor device by integrating the capacitor structure within the same substrate. The capacitor is formed using the semiconductor substrate itself and electrode structures, eliminating the need for separate external placement on PCB. This consolidation maintains the voltage management function while reducing total device surface area.
Solution Approach 2:
The patent transitions from planar external placement to three-dimensional integration within the substrate. The capacitor structure utilizes vertical stacking and layered construction within the substrate thickness, allowing the RC snubber functionality to be embedded in the depth dimension rather than occupying additional lateral surface area.
2Reliability
If RC snubber is placed externally on PCB, then effective damping and voltage management are provided, but process costs increase due to separate placement
Solution Approach 1:
The patent combines the fabrication of the semiconductor device and RC snubber into a single integrated manufacturing process. The capacitor structure is formed using the same substrate and electrode deposition processes as the main device, eliminating separate placement and assembly steps. This integration reduces process complexity and manufacturing costs while maintaining effective voltage management.
3Object-affected harmful factors
If RC snubber is placed externally on PCB, then EMI control is achieved, but device miniaturization is hindered
Solution Approach 1:
The patent integrates the EMI control functionality directly into the semiconductor device substrate by forming the capacitor structure within the same chip. This consolidation eliminates the need for separate external EMI control components, maintaining electromagnetic interference control while enabling device miniaturization through reduced total surface area.
4Area of stationary object
If RC snubber is integrated into semiconductor manufacturing process, then device surface area and process costs are reduced, but integration complexity increases
Solution Approach 1:
The patent employs existing semiconductor manufacturing processes and materials to create the capacitor structure, making the same equipment and techniques serve multiple functions. The electrode deposition, dielectric layer formation, and substrate processing steps are utilized for both the main device and the integrated RC snubber, reducing integration complexity despite the added functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the total surface area and process costs of semiconductor devices while providing effective damping and voltage management, enhancing the miniaturization and efficiency of semiconductor power devices.
Implementation Method 1
the capacitive structure includes a first capacitive electrode and a second capacitive electrode
Data Source
AI summary
A semiconductor structure includes a substrate including a first surface and a second surface opposite to each other, and a unit region and a terminal region adjacent to each other. An electrode structure in the substrate extends from the first surface toward the second surface in the unit region. A trench structure in the substrate extends from the first surface toward the second surface in the unit region and adjoins the terminal region. The trench structure includes a semiconductor material layer extending to the first surface. A capacitive structure on the first surface of the substrate in the terminal region adjoins the trench structure. The capacitive structure has a material the same as the semiconductor material layer, and has a capacitive electrode connected to the semiconductor material layer. A method for manufacturing the semiconductor structure is also provided.