Integrated Voltage Regulator With Stacked Magnetic Layers for Low-Loss Power
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Solution Overview
Problem
The integration of semiconductor devices with increasing functions and power networks within packages faces challenges in reducing power loss during transmission and distribution, while maintaining high integration density and operational frequency.
Innovation Solution
The implementation of an integrated voltage regulator (IVR) with a multi-layer structure comprising ferromagnetic and anti-ferromagnetic materials, which increases inductance and reduces the overall area, along with a configuration that minimizes the distance to electronic components, thereby reducing power loss and enhancing operational frequency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the distance between power sources and electronic components is reduced, then power loss is reduced, but the integration density and operational frequency requirements make this challenging to achieve
Solution Approach 1:
The voltage regulator is integrated directly onto the semiconductor device, merging the power management function with the electronic component. This eliminates separate power sources and distribution traces, reducing power loss while maintaining high integration density through functional consolidation rather than spatial proximity alone
Solution Approach 2:
The patent transitions from planar power distribution to three-dimensional integration by stacking magnetic layers (ferromagnetic and anti-ferromagnetic) vertically. This vertical dimension allows compact placement of high-inductance structures close to electronic components without increasing footprint area, reducing power loss while preserving integration density
2Speed
If multi-layer magnetic structures are used to increase inductance, then operational frequency is improved, but the manufacturing complexity increases
Solution Approach 1:
The patent achieves high inductance by changing the magnetic parameters of the material structure - specifically by stacking ferromagnetic and anti-ferromagnetic layers with controlled thicknesses and magnetization directions. This allows achieving >100 MHz operational frequency through material parameter optimization rather than complex geometric structures, simplifying manufacturing
Solution Approach 2:
The invention uses composite magnetic structures combining ferromagnetic and anti-ferromagnetic materials in alternating layers. This composite approach creates exchange-coupled magnetic systems that provide high inductance density and enhanced operational frequency while maintaining compatibility with standard semiconductor manufacturing processes through controlled deposition techniques
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The IVR enhances semiconductor device performance by boosting operational frequency beyond 100 MHz and reducing power loss, while being compatible with advanced manufacturing processes.
Implementation Method 1
an integrated voltage regulator (IVR) with a multi-layer structure comprising ferromagnetic and anti-ferromagnetic materials, which increases inductance
Implementation Method 2
The IVR enhances semiconductor device performance by boosting operational frequency beyond 100 MHz and reducing power loss
Data Source
AI summary
An integrated voltage regulator includes a lower portion, an upper portion, and a conductive feature. The lower portion includes at least one first anti-ferromagnetic layer and at least one first ferromagnetic layer stacked on the at least one first anti-ferromagnetic layer. The upper portion includes at least one second anti-ferromagnetic layer and at least one second ferromagnetic layer stacked on the at least one second anti-ferromagnetic layer. The conductive feature interposes between the lower portion and the upper portion.