Integrated Resistor and Connection Structure in Semiconductor
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Solution Overview
Problem
The manufacturing of integrated circuits is complex and costly due to the need for multiple processing steps and different materials for resistors and connections, which increases the complexity and cost of fabricating resistors and connections in integrated circuits.
Innovation Solution
A method is introduced where a multi-layer gate electrode and a thin resistor structure are formed using a common material, such as tungsten, in a dielectric layer on a semiconductor substrate, with the resistor and connection structures having similar compositions, allowing for simultaneous formation and simplifying the manufacturing process by reducing the number of material deposition steps and masking layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If different materials are used for resistors and connections, then the electrical performance can be optimized, but the manufacturing complexity and cost increase due to multiple deposition steps and masking layers
Solution Approach 1:
The patent merges the resistor and connection structures into a single integrated component formed by one continuous deposition process. The resistor element and connection terminals are created simultaneously from the same material layer, eliminating the need for separate deposition steps and reducing manufacturing complexity while maintaining electrical performance through optimized geometric design
Solution Approach 2:
The patent creates a universal structure that serves dual functions: the same material layer and geometric configuration provide both resistive functionality and conductive connection functionality. This multi-functional design allows a single structure to replace what would traditionally require separate resistor and interconnect layers, reducing the number of processing steps
2Adaptability or versatility
If multiple materials are deposited for resistors and connections, then functional requirements are met, but the number of processing steps and manufacturing cost increase
Solution Approach 1:
The patent combines multiple functional elements (resistor and connection) into a single deposition process, creating both structures simultaneously from one material layer. This merging approach maintains the ability to meet diverse functional requirements through geometric variation while dramatically improving manufacturing efficiency by eliminating sequential processing steps
Solution Approach 2:
The patent achieves different functional characteristics (resistive vs. conductive) by varying geometric parameters (width, length, thickness, pattern) rather than changing material composition. This allows the same material layer to fulfill multiple functional requirements while streamlining the manufacturing process to a single deposition step
3Adaptability or versatility
If separate structures are used for resistors and connections, then design flexibility is maintained, but the fabrication complexity and cost increase
Solution Approach 1:
The patent applies local quality by creating regions with different geometric characteristics within a single continuous material layer. By varying the local dimensions (width, length, thickness) of different segments of the deposited layer, the design achieves both resistor and connection functionality with the same material, maintaining design flexibility while simplifying fabrication to a single deposition process
Data Source
AI summary
A plurality of openings is formed in a dielectric layer formed on a semiconductor substrate. The plurality of openings comprises a first opening extending to the semiconductor substrate, a second opening extending to a first depth that is substantially less than a thickness of the dielectric layer, and a third opening extending to a second depth that is substantially greater than the first depth. A multi-layer gate electrode is formed in the first opening. A thin resistor structure is formed in the second opening, and a connection structure is formed in the third opening, by filling the second and third openings substantially simultaneously with a resistor metal.