Integrated Resistor Layout at Transistor Element Region Boundaries

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Solution Overview

Problem

Existing semiconductor devices require separate element regions for transistors and resistors, leading to increased area usage due to the need for additional element separation insulators.

Innovation Solution

A semiconductor device design where a conductor with adjusted resistivity is integrated within the same element region as the transistor, serving as a resistor and reducing the overall area required.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If separate element regions are used for transistors and resistors, then device functionality is ensured, but device area increases

Engineering Contradiction:
Improvedevice functionalityVSAvoiddevice area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the transistor and resistor into a single element region, eliminating the need for separate element regions. The conductor layer forms both the transistor gate electrode and the resistor, allowing both components to share the same element region and reducing overall device area while maintaining proper electrical isolation through the element separation insulator.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The conductor layer serves multiple functions: it forms the gate electrode for the transistor and simultaneously creates the resistor structure. This multi-functionality allows a single conductor layer to fulfill both transistor gate and resistor requirements, eliminating the need for separate dedicated resistor element regions.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If separate element regions are used for transistors and resistors, then electrical isolation is ensured, but number of insulators increases

Engineering Contradiction:
Improveelectrical isolationVSAvoidnumber of insulators
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines multiple insulator functions into a single element separation insulator structure. This insulator simultaneously provides electrical isolation for both the transistor element region and the integrated resistor, eliminating the need for separate insulators that would be required if they were in distinct element regions.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The element separation insulator performs multiple isolation functions at once: it isolates the transistor from surrounding structures and simultaneously isolates the integrated resistor. This multi-functional insulator reduces the total number of insulator layers and simplifies the overall device structure.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12206019B2Semiconductor device with intergrated resistor at element region boundary
Publication Date: 2025.01.21 KK TOSHIBA
  • US12206019B2 patent drawing
  • US12206019B2 patent drawing
  • US12206019B2 patent drawing

AI summary

According to one embodiment, a semiconductor device includes a substrate having a first surface and an insulator that surrounds a first region of the first surface. A gate electrode is on the first region and has a first resistivity. A first conductor is also on the first region. The first conductor comprises a same material as the gate electrode, but has a second resistivity that is different from the first resistivity. The resistivity may be different, for example, by either use of different dopants/impurities or different concentrations of dopants/impurities. Resistivity may also be different due to inclusion of a metal silicide on the conductors or not.