Integrated Resistor Tub Structure for High-Current Low Sheet Resistance

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Solution Overview

Problem

Integrated metal film resistors lack high current capability and low sheet resistance, limiting their application in current sensing and other circuits.

Innovation Solution

An integrated resistor design featuring a resistor tub formed from conformal metal with a dielectric liner and a resistive element of increased thickness, allowing for higher current carrying capability and lower sheet resistance, formed concurrently with other IC structures without additional mask operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If integrated thin film resistors are used to reduce cost and form factor, then manufacturing cost and device size are improved, but current capability and sheet resistance performance deteriorate

Engineering Contradiction:
Improvemanufacturing costVSAvoidcurrent capability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the thickness parameter of the resistive element from conventional thin film (typically <0.1 μm) to thick film (at least 0.5 μm). This parameter change enables the integrated resistor to achieve low sheet resistance (below 10 Ω/square) and high current capability (at least 1 A) while maintaining the cost and size advantages of integrated fabrication processes

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent transitions from planar thin film resistance to three-dimensional thick film resistance by increasing the vertical dimension of the resistive element. This dimensional change allows current to flow through a larger cross-sectional area, thereby increasing current capability while maintaining compatibility with integrated circuit fabrication

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Area of moving object

If conventional thin film resistive elements are used in integrated circuits, then integration density is improved, but current carrying capability and low sheet resistance deteriorate

Engineering Contradiction:
Improveintegration densityVSAvoidcurrent carrying capability
Core Design Contradiction:
Area of moving objectVSReliability

Solution Approach 1:

The patent modifies the thickness parameter of the resistive element to at least 0.5 μm, enabling it to carry high current (at least 1 A) and achieve low sheet resistance (below 10 Ω/square) while maintaining compact integrated circuit footprint through efficient space utilization

Inventive Principle:
Principle #35Parameter changes

3Reliability

If thicker resistive elements are used to increase current capability, then current carrying capability and low sheet resistance are improved, but manufacturing process complexity may worsen

Engineering Contradiction:
Improvecurrent capabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the formation of the thick resistive element with standard integrated circuit fabrication steps. The resistive element is formed as part of the interconnect structure using deposition and planarization processes that are already present in CMOS manufacturing, avoiding the need for separate specialized processing stages

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The thick resistive element structure serves multiple functions: it provides high current capability for power distribution, low sheet resistance for signal routing, and thermal management benefits. This multi-functional design allows a single structure to address multiple circuit requirements without increasing overall device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The integrated resistor achieves high current capability above 1 A and low sheet resistance below 10 Ω/square, enhancing its performance in applications like current sensing and bridge circuits.

Implementation Method 1

a resistor tub formed from a conformal metal

Methodology Applied
Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 2

the dielectric liner electrically insulates the resistive element from the resistor tub

Methodology Applied
Scientific EffectElectrical insulation: Dielectric

Data Source

PatentUS20240088201A1Integrated resistor
Publication Date: 2024.03.14 MICROCHIP TECHNOLOGY INC
  • US20240088201A1 patent drawing
  • US20240088201A1 patent drawing
  • US20240088201A1 patent drawing

AI summary

An integrated resistor includes a resistor tub, a resistive element, and a dielectric liner. The resistor tub is formed from a conformal metal, and includes a laterally-extending tub base and vertically-extending tub sidewalls extending upwardly from the laterally-extending tub base, wherein the laterally-extending tub base and vertically-extending tub sidewalls define in a resistor tub interior opening. The dielectric liner is formed in the resistor tub interior opening. The resistive element is formed over the dielectric liner in the resistor tub interior opening, and includes a pair of resistor heads connected by a laterally-extending resistor body. The dielectric liner electrically insulates the resistive element from the resistor tub.