Integrated Schottky Barrier Diode in Semiconductor Device
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Solution Overview
Problem
Conventional semiconductor devices with integrated Schottky barrier diodes require significant space and high manufacturing costs, limiting device performance, size reduction, and cost efficiency.
Innovation Solution
Integration of a Schottky barrier diode and a diode element on a substrate with an isolation structure, where the diode element includes p-type and n-type doped regions and an intrinsic region, forming a Schottky contact with a metal layer to reduce device size and enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a Schottky barrier diode is integrated with a MOSFET through external connection or packaged together, then device performance can be improved, but device size increases and manufacturing costs increase
Solution Approach 1:
The patent merges the Schottky barrier diode and MOSFET into a single integrated device structure. The Schottky barrier diode is formed by creating a Schottky contact between a metal layer and the drain region of the MOSFET, while the body diode is formed through the natural p-n junction between the body region and drain region. This integration eliminates the need for separate external connections or packaging, thereby reducing device size while maintaining performance benefits.
Solution Approach 2:
The integrated device structure serves multiple functions simultaneously. The same physical structure provides both MOSFET switching functionality and Schottky barrier diode protection functionality, as well as body diode functionality. This multi-functionality is achieved through the shared drain region and body region that form both the Schottky contact and the p-n junction, eliminating the need for separate dedicated components.
2Reliability
If a Schottky barrier diode is integrated with a MOSFET through external connection or packaged together, then device performance can be improved, but manufacturing costs increase
Solution Approach 1:
The patent combines the fabrication processes for the Schottky barrier diode and MOSFET into a single integrated manufacturing flow. The Schottky contact is formed during the same metal deposition and patterning steps used for the MOSFET drain contact, and the body diode p-n junction is formed during the same doping processes. This merged approach eliminates separate manufacturing steps, reducing complexity and cost.
3Loss of energy
If shoot through currents are reduced using a Schottky barrier diode, then power consumption can be reduced and switching speeds can be increased, but device size and manufacturing costs increase
Solution Approach 1:
The patent integrates the Schottky barrier diode functionality directly into the MOSFET structure by forming a Schottky contact at the drain region. This integration allows the device to achieve low power consumption and fast switching speeds through the Schottky barrier effect while maintaining a compact form factor, as no additional external diode components are required.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of Schottky barrier diodes within the semiconductor device reduces device size, saves costs, and achieves high punch-through voltage, fast switching speeds, and lowered shoot-through currents, thereby enhancing overall device performance.
Implementation Method 1
The first metal layer and the intrinsic region of the diode element are electrically connected and form a Schottky contact, so as to constitute at least one Schottky barrier diode
Implementation Method 2
the p-type doped region and the n-typed doped region located on two sides of the diode element respectively form ohmic contacts
Data Source
AI summary
A semiconductor device including a substrate, an isolation structure, a diode element, and a first metal layer is provided. The isolation structure is located in the substrate. The diode element is located on the isolation structure. The diode element includes a p-type doped region, an n-type doped region, and an intrinsic region, and the intrinsic region is located between the p-type doped region and the n-type doped region. The p-type doped region and the n-type doped region located on two sides of the diode element respectively form ohmic contacts. The first metal layer and the intrinsic region of the diode element are electrically connected and form a Schottky contact, so as to constitute at least one Schottky barrier diode.