Integrated Sensing Device Fabrication via Mask Merging
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The conventional fabrication process of optical sensors, such as those used in medical diagnosis, involves complex and time-consuming steps due to the sequential fabrication of thin film transistors (TFT) and PIN diodes, requiring numerous masks and complicating the integration of these components.
Innovation Solution
A sensing device is developed with an integrated structure that includes a substrate, a switching element, a sensing element, and a photoelectric conversion layer, where the fabricating method simplifies the process by forming a semiconductor layer, insulating layers, and electrodes in a manner that integrates the fabrication of both the switching and sensing elements, using a blanket-covering conductor layer to prevent hydrogen ion interference and reduce the number of masks needed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the TFT and PIN diode are individually fabricated sequentially using conventional processes, then each component can be optimized separately, but the number of masks increases and fabrication steps become complicated and time-consuming
Solution Approach 1:
The patent merges the fabrication processes of the TFT switching element and the PIN diode sensing element into a single integrated process. Both components are formed simultaneously using the same sequence of masks and deposition steps, eliminating the need for separate fabrication processes. This reduces the total number of masks required and simplifies the overall manufacturing workflow while maintaining the ability to optimize both components through unified process parameters.
2Reliability
If the TFT and PIN diode are individually fabricated sequentially, then each component can be independently optimized, but the fabrication time increases
Solution Approach 1:
The patent combines the fabrication of TFT and PIN diode into a single parallel process using identical mask sets and deposition sequences. Both components are formed simultaneously in the same fabrication chamber during the same time intervals, effectively doubling the production rate compared to sequential fabrication while maintaining independent component optimization through unified process control.
3Reliability
If separate fabrication processes are used for TFT and PIN diode, then each component can be independently controlled, but the number of masks required increases
Solution Approach 1:
The patent utilizes the same mask sets for fabricating both the TFT switching element and the PIN diode sensing element. The mask patterns are designed to simultaneously define both components during deposition, reducing the total number of masks required from separate fabrication processes to a unified set of masks that control both component geometries and material placements in a single fabrication sequence.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication steps, enhances the reliability of the sensing device, and reduces parasitic capacitance, thereby improving the efficiency and performance of the optical sensors.
Implementation Method 1
the PIN diode may convert optical energy into an electric signal
Data Source
AI summary
A sensing device including a substrate, a switching element, a sensing element and a common electrode is provided. The switching element is disposed on the substrate and includes a source electrode. The sensing element is disposed at one side of the switching element and includes a lower electrode, a photoelectric conversion layer and an upper electrode. The lower electrode is electrically connected to the source electrode. The photoelectric conversion layer is disposed on the lower electrode. The upper electrode is disposed on the photoelectric conversion layer. The common electrode is electrically connected to the upper electrode and belongs to the same film layer as the source electrode. A fabricating method of a sensing device is also provided.