Integrated Piezoresistive Pressure and Capacitive Acceleration Sensor Die
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Solution Overview
Problem
There is a need for sensors that can simultaneously measure accelerations and pressures with improved manufacturability, incorporating both a pressure sensor element and an acceleration sensor element.
Innovation Solution
A semiconductor die is designed with a piezoresistive pressure sensor element and a capacitive acceleration sensor element, where the pressure sensor is arranged alongside the acceleration sensor, utilizing a monocrystalline and polycrystalline semiconductor layer structure, and a buried cavity is formed to create a piezoresistive pressure sensor element, allowing for simultaneous measurement capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If separate pressure sensors and acceleration sensors are manufactured using different processes, then each sensor type can be optimized for its specific function, but production time increases and manufacturing complexity increases
Solution Approach 1:
The patent combines pressure sensor elements and acceleration sensor elements into a single semiconductor die, manufacturing both sensor types simultaneously using the same semiconductor processing line. This integration maintains the functional optimization of each sensor type while eliminating the need for separate manufacturing processes, thereby reducing production time and increasing productivity.
Solution Approach 2:
The semiconductor processing facility is designed to perform multiple functions by producing both pressure sensors and acceleration sensors using the same equipment and process steps. The universal processing approach allows a single facility to manufacture different sensor types without requiring dedicated production lines for each sensor type.
2Measurement precision
If separate pressure sensors and acceleration sensors are manufactured using different processes, then each sensor type can be optimized for its specific function, but device complexity increases
Solution Approach 1:
The patent combines pressure sensor elements and acceleration sensor elements into a single semiconductor die, manufacturing both sensor types simultaneously using the same semiconductor processing line. This integration maintains the functional optimization of each sensor type while eliminating the need for separate manufacturing processes, thereby reducing production time and increasing productivity.
3Productivity
If both pressure sensor element and acceleration sensor element are integrated in one semiconductor die, then production time is reduced and manufacturability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating distinct regions within the semiconductor die for pressure sensor elements and acceleration sensor elements. Each region is structured with specific properties optimized for its sensor type, allowing both sensor types to be manufactured with high precision using the same processing equipment without compromising the manufacturing precision requirements.
4Ease of manufacture
If both pressure sensor element and acceleration sensor element are integrated in one semiconductor die, then existing semiconductor processing facilities can be utilized efficiently, but device complexity increases
Solution Approach 1:
The semiconductor processing facility is designed to perform multiple functions by producing both pressure sensors and acceleration sensors using the same equipment and process steps. The universal processing approach allows a single facility to manufacture different sensor types without requiring dedicated production lines for each sensor type.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables efficient production of sensors with equal sensitivity in all spatial directions, reducing production time and utilizing existing semiconductor processing facilities, while maintaining the advantages of both sensor types.
Implementation Method 1
The semiconductor chip comprises a piezoresistive pressure sensor element
Implementation Method 2
at least one capacitive acceleration sensor element
Data Source
AI summary
In some implementations a semiconductor die comprises a semiconductor chip. The semiconductor chip comprises a piezoresistive pressure sensor element and at least one capacitive acceleration sensor element. The piezoresistive pressure sensor element is arranged to the side of the capacitive acceleration sensor element. In some implementations, a method for producing a semiconductor die includes applying an insulation layer to the semiconductor wafer. A section of the monocrystalline cover layer may be exposed by structuring the insulation layer. A semiconductor layer having a monocrystalline section and a polycrystalline section may be generated by deposition of a semiconductor material.