Integrated Solid State Power Switch for Aircraft Fault Protection
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Solution Overview
Problem
Conventional MOSFET-based power protection systems for aircraft are bulky and heavy due to the need for extensive cooling and large semiconductor material to manage high power surges, limiting their suitability for high-power applications in aircraft.
Innovation Solution
An integrated solid state power switch combining a field effect transistor (FET) channel for normal operation and a bipolar transistor channel for overload conditions, eliminating the need for external sensors and active cooling by providing separate current flow paths within a compact, lightweight device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If MOSFET-based power protection systems use larger and heavier cooling devices and more semiconductor material to handle high power surges, then the power handling capability and fault protection are improved, but the weight and size of the device increase significantly
Solution Approach 1:
The patent combines the FET channel and bipolar transistor channel into a single integrated device structure. The FET channel handles normal operating currents while the bipolar transistor channel automatically activates during overload conditions, merging two different transistor technologies into one unified power protection device that eliminates the need for separate cooling systems and external sensors.
Solution Approach 2:
The integrated device provides self-protection by automatically routing overload currents through the bipolar transistor channel when fault conditions occur. The device monitors its own current levels and switches between operational modes without requiring external sensors or control systems, thereby eliminating the need for heavy external cooling and protection infrastructure.
2Temperature
If MOSFET-based systems use forced fluid cooling and large heatsink devices to dissipate heat during fault conditions, then the temperature control and device survival are improved, but the device complexity and size increase
Solution Approach 1:
The bipolar transistor channel inherently provides a lower resistance path for overload currents, automatically dissipating excess power as heat through the semiconductor structure itself without requiring external forced cooling systems. The device structure is designed to handle thermal loads intrinsically through its material properties and geometry.
Solution Approach 2:
The patent changes the resistance parameter dynamically by switching between the FET channel (higher resistance, normal operation) and the bipolar transistor channel (lower resistance, overload conditions). This parameter change allows the device to adapt its electrical characteristics to match operational requirements, reducing the need for external thermal management systems.
3Loss of energy
If MOSFET-based power switches use many individual devices in parallel or very bulky power devices to reduce resistance and dissipate heat, then the power dissipation capability is improved, but the device volume and weight increase
Solution Approach 1:
The patent merges the functionality of multiple parallel MOSFET devices into a single integrated structure that combines FET and bipolar transistor channels. This unified structure achieves the same power dissipation capability that would otherwise require multiple discrete devices or large bulky power devices, significantly reducing the overall device volume while maintaining equivalent thermal and electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated power switch effectively manages over-current conditions without bulky cooling, enabling compact, lightweight, and reliable high-power protection in aircraft systems, reducing cooling requirements and maintaining device integrity during faults.
Implementation Method 1
a field effect transistor (FET) channel that is operable during normal device operation to provide an operating current flow path
Implementation Method 2
a bipolar transistor channel that is operable during device overload conditions to provide an overload current flow path
Implementation Method 3
heat generated is proportional to Pfault (the power to be dissipated Pfault=I2fault.R, where R is the resistance of the MOSFET devices)
Data Source
AI summary
The present invention relates generally to power switches for aircraft. According to a first aspect, the present invention provides an integrated solid state power switch for fault protection in an aircraft power distribution system. The integrated solid state power switch is formed of semiconductor material that provides a field effect transistor (FET) channel that is operable during normal device operation to provide an operating current flow path and a bipolar transistor channel that is operable during device overload conditions to provide an overload current flow path. A method for manufacturing such an integrated solid state power switch is also described. Various embodiments of the invention provide automatic overload current protection for aircraft systems without the need to use bulky switches or heavy cooling equipment.