Integrated Substrate Processing Apparatus for Semiconductor Lithography
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Solution Overview
Problem
Current photolithography processes for semiconductor manufacturing struggle to set the critical dimension (CD) of patterns on semiconductor substrates to a target dimension while also reducing line edge roughness within a single process chamber.
Innovation Solution
A substrate processing apparatus that integrates a process chamber with a supporter, heater, and fluid supplier to perform post-exposure bake, developing, and hard bake processes simultaneously, utilizing light pulses and temperature control to achieve precise pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If photolithography processes are performed in separate process chambers, then each process can be optimized independently, but the manufacturing complexity and process time increase
Solution Approach 1:
The patent combines multiple photolithography process chambers (exposure, PEB, developing, hard bake) into a single integrated chamber. This allows sequential execution of multiple processes without substrate transfer, reducing overall process time and simplifying the manufacturing system architecture while maintaining independent process optimization through staged implementation within the same chamber.
Solution Approach 2:
The single process chamber is designed to perform multiple functions by sequentially executing different photolithography processes. The chamber can be configured for exposure, post-exposure bake, developing, and hard bake operations, making it a universal processing environment that eliminates the need for multiple specialized chambers while maintaining process quality.
2Productivity
If multiple processes are performed in one process chamber, then productivity increases, but the control precision of each process step becomes more difficult to maintain
Solution Approach 1:
The single process chamber is divided into multiple processing zones, each optimized for a specific photolithography step. This spatial segmentation allows independent control of parameters (temperature, humidity, gas flow) for each process stage while maintaining them all within the same chamber, thus preserving process control precision despite integration.
Solution Approach 2:
The system employs dynamic control mechanisms that adjust process parameters in real-time based on the current processing stage. This includes dynamic temperature control for PEB and hard bake, dynamic gas flow control for developing, and dynamic lighting control for exposure, ensuring each process receives optimal conditions even within a unified chamber environment.
3Manufacturing precision
If temperature is increased during post-exposure bake to improve pattern formation, then line edge roughness increases
Solution Approach 1:
The post-exposure bake process uses periodic or pulsed heating instead of continuous high-temperature exposure. This allows the photoresist to undergo the necessary chemical changes for pattern formation while limiting the cumulative thermal energy input that causes line edge roughness, achieving a balance between pattern quality and edge smoothness through controlled temporal heating profiles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively forms patterns with target critical dimensions and low line edge roughness on semiconductor substrates by controlling heat energy and developer temperature across multiple processing steps within a single chamber.
Implementation Method 1
the heater includes one or more irradiation modules for generating light pulses and directing the light pulses to the first surface of the substrate
Implementation Method 2
a fluid supplier configured to supply fluid to the first surface of the substrate
Data Source
AI summary
A substrate processing apparatus includes a process chamber having a space in which a substrate is disposed and processed in the process chamber, a supporter disposed in the process chamber and configured to support and rotate the substrate, a heater disposed in the process chamber and configured to heat a first surface of the substrate, where the heater includes one or more irradiation modules for generating light pulses and directing the light pulses to the first surface of the substrate, a controller configured to control an intensity of the light pulse generated by each of the one or more irradiation modules of the heater, and a fluid supplier configured to supply fluid to the first surface of the substrate.