Integrated Superconductor Device Fabrication via Single-Chamber Deposition
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Solution Overview
Problem
The complex processing involved in forming high temperature superconductor (HTS) tapes for current limiter applications, which requires a specific crystallographic orientation and multiple layers, leads to challenges in manufacturing and handling.
Innovation Solution
An integrated superconductor device is formed with a substrate base and an intermediate layer having a preferred crystallographic orientation, an oriented superconductor layer, and a conductive strip with a non-linear pattern, where the exposed portion of the superconductor layer is treated to become a non-superconductor, resulting in a tape-like structure integrated within a substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional HTS tape fabrication methods are used with multiple deposition chambers and intermediate layers, then the superconductor layer achieves required current carrying capability and crystallographic orientation, but the processing becomes extensive and complex
Solution Approach 1:
The patent combines multiple deposition chambers and processing steps into a single integrated deposition chamber, consolidating the formation of substrate, buffer layer, superconductor layer, and capping layer into one continuous process. This merging eliminates the complexity of transporting tapes between multiple chambers while maintaining the required crystallographic orientation through in-situ deposition sequences.
Solution Approach 2:
The single deposition chamber is designed to perform multiple functions: substrate preparation, buffer layer deposition with controlled crystallographic orientation, superconductor layer formation, and capping layer deposition. This multi-functional approach replaces the specialized single-function chambers of conventional methods, achieving the same manufacturing precision with reduced processing complexity.
2Manufacturing precision
If multiple intermediate layers are deposited to achieve c-axis texture, then the superconductor tape achieves proper orientation for current carrying, but the number of processing steps increases
Solution Approach 1:
The patent deposits the buffer layer with specific crystallographic orientation (e.g., (001) orientation) as a preliminary action before forming the superconductor layer. This pre-established oriented substrate serves as a template that directs the growth of the superconductor layer in the desired c-axis orientation, eliminating the need for multiple intermediate layers and subsequent re-orientation steps.
Solution Approach 2:
The buffer layer acts as an intermediary between the substrate and the superconductor layer, providing the necessary crystallographic template for c-axis texture development. This single intermediary layer with controlled orientation replaces multiple intermediate layers, maintaining manufacturing precision while improving fabrication efficiency by reducing the total number of deposition steps.
3Ease of manufacture
If superconductor tapes are formed as separate entities requiring assembly, then each tape can be independently processed, but the assembly into current limiters requires additional handling and fastening operations
Solution Approach 1:
The patent merges multiple separate superconductor tapes into a single integrated structure by depositing them sequentially on the same substrate within the same chamber. The tapes are formed as contiguous or overlapping layers sharing common interfaces and support structures, eliminating the need for mechanical assembly and fastening operations while preserving independent processing capabilities through controlled deposition parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication of superconductor tapes by integrating them onto a large area substrate, reducing manufacturing complexity and enabling the formation of long current paths in compact devices, such as current limiters, with improved mechanical stability and adjustable resistance.
Implementation Method 1
an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation
Implementation Method 2
the superconducting layer undergoes a transition to non-superconducting state
Data Source
AI summary
An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer, The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.