Integrated Thermoelectric Generator CMOS Compatibility

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Solution Overview

Problem

Conventional thermoelectric generators are not compatible with CMOS technologies used in microelectronics, particularly for embedded non-volatile memory production, and require additional masks or process steps, limiting their integration and efficiency.

Innovation Solution

An integrated thermoelectric generator is designed using a semiconductor substrate with shallow trench isolation and polysilicon thermocouples, electrically connected in series and thermally in parallel, compatible with existing CMOS manufacturing methods, without requiring supplementary masks or process steps, utilizing metal tracks and vias for connections and isolating materials to enhance efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If conventional thermoelectric generators are used with ceramic supports and non-CMOS materials, then thermoelectric generation is achieved, but compatibility with CMOS manufacturing technology is lost and additional masks or process steps are required

Engineering Contradiction:
ImproveCompatibility with CMOS manufacturing technologyVSAvoidAdditional masks or process steps
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent merges the thermoelectric generator structure with the CMOS manufacturing process by using the same semiconductor substrate and integrating thermocouples during standard fabrication steps. The support structure is formed from the substrate itself rather than requiring separate ceramic components, combining multiple functions into a unified device that leverages existing manufacturing capabilities.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The semiconductor substrate serves multiple functions: it acts as the mechanical support, the thermal conduction path, and the foundation for integrating thermocouples. This multi-functional design eliminates the need for separate ceramic support structures and enables fabrication using standard CMOS processes that already produce the substrate and associated circuitry.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Power

If thermocouples are thermally connected in parallel to experience the same temperature gradient, then Seebeck effect voltage generation is optimized, but thermal conduction between thermocouples increases heat loss

Engineering Contradiction:
ImproveElectrical power outputVSAvoidThermal energy loss through substrate conduction
Core Design Contradiction:
PowerVSLoss of energy

Solution Approach 1:

The patent applies different thermal conductivity properties to different regions of the substrate. Areas beneath the thermocouple legs have high thermal conductivity to efficiently conduct heat from the hot side to the cold side, while regions between thermocouples maintain lower thermal conductivity to minimize parasitic heat loss. This spatial variation in thermal properties optimizes both power generation and thermal efficiency.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables the integration of thermoelectric generators within integrated circuits, increasing electrical power output while maintaining compatibility with conventional microelectronics manufacturing processes, delaying temperature equalization and improving efficiency.

Implementation Method 1

A potential difference which is due to the Seebeck effect is then created between the two terminals of the set of thermocouples electrically connected in series

Methodology Applied
Scientific EffectSeebeck effect: Seebeck Effect

Data Source

PatentUS9490415B2Integrated thermoelectric generator
Publication Date: 2016.11.08 STMICROELECTRONICS (ROUSSET) SAS
  • US9490415B2 patent drawing
  • US9490415B2 patent drawing
  • US9490415B2 patent drawing

AI summary

An integrated thermoelectric generator includes a semiconductor. A set of thermocouples are electrically connected in series and thermally connected in parallel. The set of thermocouples include parallel semiconductor regions. Each semiconductor region has one type of conductivity from among two opposite types of conductivity. The semiconductor regions are electrically connected in series so as to form a chain of regions having, alternatingly, one and the other of the two types of conductivity.