Integrated Transistor Clamping Layout for Shorter Gate Wiring
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Solution Overview
Problem
In semiconductor devices, the large distance between a transistor and its clamping element on a Printed Circuit Board (PCB) degrades the clamping effect, making it impossible to provide a small distance between the transistor and the clamping element, which affects the performance of the clamping element.
Innovation Solution
The semiconductor device includes a first transistor and a second transistor encapsulated by the same encapsulation body, with the control electrode of the first transistor electrically coupled to a control electrode pin through a binding line, and the control electrode of the second transistor electrically coupled to a second control electrode pin, reducing the distance between them to enhance the clamping effect and simplify wiring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the clamping element is arranged on a PCB card, then the device structure is simplified and ease of manufacture is improved, but the distance between the transistor and clamping element increases significantly, degrading the clamping effect
Solution Approach 1:
The patent merges the clamping element with the transistor by forming the clamping element's electrodes directly on the same semiconductor substrate as the transistor. This integration eliminates the need for separate PCB card mounting, thereby maintaining ease of manufacture while significantly reducing the distance between the transistor and clamping element to enhance the clamping effect.
Solution Approach 2:
The patent transitions from a planar PCB card arrangement to a three-dimensional integrated structure where the clamping element is formed vertically above the transistor on the semiconductor substrate. This dimensional change allows the clamping element to be positioned much closer to the transistor while maintaining structural simplicity.
2Reliability
If the clamping element is integrated close to the transistor, then the clamping effect is improved, but the device complexity and wiring complexity increase
Solution Approach 1:
The patent combines the clamping element and transistor into a single integrated device structure on the same semiconductor substrate. This merging approach improves the clamping effect by reducing distance while simultaneously simplifying the overall device structure and reducing wiring complexity compared to separate mounted components.
Solution Approach 2:
The semiconductor substrate serves multiple functions: it acts as the base for the transistor, provides the structure for the clamping element, and integrates the interconnecting wiring. This multi-functionality approach improves clamping performance while avoiding increased device complexity by using the same substrate for multiple purposes.
3Reliability
If the distance between transistor and clamping element is reduced, then the clamping effect is enhanced, but the wiring complexity and manufacturing difficulty increase
Solution Approach 1:
The patent merges the clamping element and transistor into a single integrated structure on the semiconductor substrate, reducing the distance between them to enhance the clamping effect. The integration is achieved through standard semiconductor fabrication processes, maintaining ease of manufacture while improving performance.
Solution Approach 2:
The patent changes the spatial parameter by forming the clamping element's electrodes at different vertical levels on the semiconductor substrate, with the first electrode positioned above the transistor and the second electrode positioned below. This parameter change reduces the horizontal distance while using vertical stacking to maintain manufacturing simplicity.
Data Source
AI summary
The present disclosure provides a semiconductor device, including an encapsulation body, a first transistor and a second transistor. The first transistor includes a control electrode, a first terminal and a second terminal, and the first transistor is configured to allow a current to flow from the first terminal to the second terminal under the control of a potential at the control electrode of the first transistor. A first electrode of the second transistor is electrically coupled to the control electrode of the first transistor, and a second electrode of the second transistor is electrically coupled to the second terminal of the first transistor. The first transistor and the second transistor are encapsulated by the same encapsulation body, the control electrode of the first transistor is electrically coupled to a first control electrode pin, and the control electrode of the second transistor is electrically coupled to a second control electrode pin. According to the present disclosure, it is able to ensure a better clamping effect and simplify the wiring.