Integrated Transistor-Resistor Layout for Low-Noise IC Area Reduction
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Solution Overview
Problem
The semiconductor manufacturing industry faces challenges in miniaturization and area efficiency due to the constraints imposed by the dimensions of passive components in integrated circuit (IC) layout, which limits the development of smaller and more complex ICs.
Innovation Solution
The proposed solution involves embedding passive components, such as resistors, within the same region as active components like transistors in IC layouts, allowing for a hybrid component design that reduces overall area usage by up to 50% by integrating resistors and transistors within the same region, thereby optimizing space on the semiconductor wafer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If passive components are separated from active components in IC layout, then manufacturing precision and reliability are improved, but area usage increases significantly
Solution Approach 1:
The patent merges passive components (resistors) and active components (transistors) into a single integrated structure where the resistor is formed within the same active region as the transistor. This is achieved by forming a first portion of the resistor in a first active region and a second portion of the resistor in a second active region, with both portions sharing common doped regions that serve dual purposes as both transistor components and resistor components. This merging eliminates the need for separate passive component areas while maintaining manufacturing precision through unified fabrication processes.
Solution Approach 2:
The patent creates multi-functional structures where doped regions serve dual purposes: they act as source/drain regions for transistors and simultaneously serve as terminal regions for resistors. The same active region performs both transistor operation and resistor function, allowing a single structure to fulfill multiple circuit functions. This universality reduces the total component count and area requirement without compromising the precision of individual component fabrication.
2Area of stationary object
If passive components are miniaturized to reduce area, then area efficiency is improved, but noise performance deteriorates
Solution Approach 1:
By combining the resistor and transistor into a single integrated structure, the patent achieves miniaturization without the noise penalties of conventional miniaturized resistors. The resistor benefits from the transistor's well-controlled active region geometry and doping profile, which provide stable electrical characteristics. The shared doped regions create a compact design where the resistor length is precisely defined by the active region dimensions, reducing area while maintaining low noise through consistent geometric control.
Solution Approach 2:
The patent applies different local qualities to different portions of the integrated structure: the active region provides high mobility for transistor operation, while the same region's geometric constraints define the resistor's precise dimensions for low noise. The doped regions are locally optimized to serve both functions simultaneously, with doping concentrations and geometries tailored to achieve both transistor performance and resistor stability in the same spatial location.
Data Source
AI summary
The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate, an active region on the substrate, and a first transistor having a gate structure, a source conductor, and a drain conductor disposed on the active region, wherein the drain conductor and the source conductor are disposed on opposite sides of the gate structure, and the source conductor is shorter than the drain conductor.