Integrated Trench MOS Transistor and Boost Controller for DC-DC Transformers
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Solution Overview
Problem
The existing DC-DC transformer circuits require a large space for configuration due to separate integrated circuits for the MOSFET and boost controller, leading to increased fabrication time and costs, and reduced reliability of the output voltage.
Innovation Solution
A semiconductor device with a trench metal oxide semiconductor (MOS) transistor and a boost controller integrated on a single semiconductor substrate, where the trench MOS transistor and boost controller form an integrated structure, reducing physical space and fabrication complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the MOSFET and boost controller are implemented as separate integrated circuits, then each component can be optimized independently, but the physical space required increases and fabrication complexity increases
Solution Approach 1:
The patent combines the MOSFET switching element and the boost controller into a single integrated circuit on one semiconductor substrate. The controller includes circuitry coupled to the MOSFET gate that directly controls the switching operation, eliminating the need for separate integrated circuits. This merging reduces the total physical space occupied while maintaining the ability to optimize both components through integrated design.
2Manufacturing precision
If the MOSFET and boost controller are implemented as separate integrated circuits, then each component can be optimized independently, but fabrication time and costs increase
Solution Approach 1:
The patent integrates the MOSFET and boost controller onto a single semiconductor substrate, allowing both components to be fabricated simultaneously in one manufacturing process. This eliminates the need for separate fabrication processes and assembly steps, thereby reducing fabrication time and costs while maintaining the ability to optimize both components through integrated design.
3Adaptability or versatility
If the MOSFET and boost controller are implemented as separate integrated circuits, then component independence is maintained, but reliability of the output voltage decreases
Solution Approach 1:
The patent integrates the MOSFET and boost controller into a single device, creating direct electrical and control connections between the components. This integration reduces the number of external connections and interfaces, thereby reducing potential failure points and improving the reliability of the output voltage. The controller circuitry is directly coupled to the MOSFET gate, ensuring precise and reliable control of the switching operation.
4Adaptability or versatility
If separate integrated circuits are used for MOSFET and boost controller, then design flexibility is maintained, but heat management becomes more difficult
Solution Approach 1:
The patent integrates the MOSFET and boost controller on a single semiconductor substrate, allowing for unified thermal management. The close proximity of the components enables efficient heat dissipation through the substrate and shared packaging structures. The integrated design allows thermal coupling between the controller and MOSFET, facilitating passive heat sinking and reducing the need for separate cooling solutions.
Data Source
AI summary
A semiconductor device, a method for fabricating the same, and a transformer circuit using the same are disclosed. The semiconductor device includes a trench metal oxide semiconductor (MOS) transistor for switching a load of current supplied from a power source, and a boost controller for controlling driving of the trench MOS transistor, the boost controller being formed with the trench MOS transistor on a single semiconductor device to form an integrated structure. In this structure, the physical space of the semiconductor device is reduced, thereby reducing the size of a DC-DC transformer circuit using the semiconductor device. It is possible to obtain finely-adjusted output values by controlling values of the ripple current and ripple voltage. A desired operational stability according to a variation in temperature can also be secured.