Integrated TVS and Floating Capacitor for Compact Semiconductor Filters
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Solution Overview
Problem
Semiconductor-based filter designers face challenges in creating compact designs that integrate inductor and capacitor structures with transient voltage suppression (TVS) devices effectively, particularly in applications requiring small form factors.
Innovation Solution
The integration of floating capacitors with TVS devices into a single device, forming a combined capacitive and transient voltage element, which allows for adjusted capacitance and reduced size, while maintaining performance characteristics suitable for elliptic filter designs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate TVS devices are used with inductor and capacitor networks, then ESD protection and signal processing functions are provided, but the device area and complexity increase
Solution Approach 1:
The patent combines the TVS device and capacitor into a single integrated structure where the capacitor is formed using the same semiconductor elements (doped regions, dielectric layers) as the TVS device. This merging eliminates the need for separate discrete components, reducing device area while maintaining both ESD protection and signal processing functions.
Solution Approach 2:
The semiconductor structure serves multiple functions simultaneously: the doped regions and dielectric layers provide both transient voltage suppression capability and capacitive energy storage. This multi-functionality allows a single device to replace what would traditionally require separate TVS and capacitor components, thereby reducing overall device area.
2Reliability
If traditional filter designs with separate components are used, then filter performance characteristics are achieved, but the filter size increases
Solution Approach 1:
The capacitor is nested within the TVS device structure, with the dielectric layer and doped regions of the capacitor being integrated into the same vertical stack as the TVS junctions. This nesting arrangement allows the capacitor to occupy the same footprint area as the TVS device, significantly reducing the overall filter size while maintaining required capacitance values for elliptic filter performance.
Solution Approach 2:
The patent transitions from a planar arrangement of separate components to a vertical, three-dimensional integration where the capacitor and TVS device share the same lateral footprint by stacking functional layers vertically. This dimensional change enables compact filter designs that meet size requirements while preserving filter performance characteristics.
3Area of stationary object
If more passive components are integrated, then space requirements are reduced, but device complexity increases
Solution Approach 1:
The integrated device is segmented into distinct functional zones: TVS junction regions for transient voltage suppression, dielectric layers for capacitance, and contact regions for electrical connections. This segmentation allows each component to be optimized independently while maintaining a compact integrated structure, managing complexity through functional decomposition.
Solution Approach 2:
The patent adjusts doping concentrations, dielectric thickness, and layer configurations to optimize both TVS and capacitor performance within the integrated structure. By carefully controlling these parameters, the device achieves the required electrical characteristics for both ESD protection and signal processing without excessive complexity in the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of compact semiconductor filter structures with improved integration of passive components, achieving performance comparable to or exceeding that of prior art designs while reducing space requirements.
Implementation Method 1
a first MOS capacitor comprising: a first gate electrode formed over a first portion of a surface of a semiconductor substrate
Implementation Method 2
a pn junction detector diode detector having an anode and a cathode, the pn junction detector diode detector configured to detect a transient voltage
Data Source
AI summary
In one embodiment, a split well region of one conductivity type is formed in semiconductor substrate of an opposite conductivity type. The split well region forms one plate of a floating capacitor and an electrode of a transient voltage suppression device.