Integrated Voltage Divider with Overlapping Spiral Resistor
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Solution Overview
Problem
The existing designs for reducing high voltages on printed circuit boards require additional components like resistors, which increase costs and board size, making them unsuitable for modern electronic devices that need compact solutions for intermediate voltage levels.
Innovation Solution
A semiconductor structure with a high-voltage transistor and a spirally shaped voltage dropping means that overlaps the transistor, allowing for efficient use of space and providing intermediate voltage levels through connections to external points, reducing the need for additional components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If additional resistors are placed on the board to create voltage dividers, then intermediate voltage levels can be obtained, but board area increases and manufacturing complexity increases
Solution Approach 1:
The patent combines the voltage divider function with the existing high-voltage transistor structure by placing voltage dropping means (resistive elements) over the transistor body. This merging eliminates the need for separate discrete resistors on the board, thereby reducing board area while maintaining the voltage division capability. The intermediate contact points provide the required intermediate voltage levels directly from the integrated structure.
2Adaptability or versatility
If additional resistors are placed on the board to create voltage dividers, then intermediate voltage levels can be obtained, but manufacturing cost increases and yield decreases
Solution Approach 1:
The voltage dropping means are formed as part of the semiconductor structure using standard fabrication processes, eliminating the need for separate resistor assembly steps. This integration reduces manufacturing complexity and improves yield by avoiding additional assembly operations and external component attachment.
3Area of stationary object
If voltage dropping means overlap the high-voltage transistor, then space is efficiently used, but electrical isolation must be maintained
Solution Approach 1:
The patent introduces an insulating layer as an intermediary between the voltage dropping means and the high-voltage transistor. This insulating layer acts as a mediator that allows the voltage dropping elements to be positioned over the transistor for space efficiency while simultaneously preventing electrical breakdown by providing the necessary electrical isolation.
4Area of stationary object
If spirally shaped voltage dropping elements are used, then board area is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent transitions from planar resistor layouts to three-dimensional spirally shaped voltage dropping elements that extend vertically over the transistor. This dimensional change allows the voltage dropping path to be compacted in the vertical dimension while maintaining the required resistance value, thereby reducing board area without imposing excessive precision requirements on the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables compact and cost-effective generation of intermediate voltage levels without additional resistors, improving manufacturing efficiency and reducing board size, while maintaining reliability and flexibility in voltage control.
Implementation Method 1
voltage dropping means, at least part of which is overlapping the high-voltage transistor; at least one intermediate contact point to the voltage dropping means, connected to at least one intermediate position between a first and a second end of the voltage dropping means
Data Source
AI summary
A semiconductor structure including a high-voltage transistor; voltage dropping circuitry, at least part of which is overlapping the high-voltage transistor; at least one intermediate contact point to the voltage dropping circuitry, connected to at least one intermediate position between a first and a second end of the voltage dropping circuitry; and at least one external connection connecting the at least one intermediate contact point to outside of the semiconductor structure.