3D Memory Inter-Deck Plug Smooth Surface Design
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Solution Overview
Problem
The existing inter-deck plug structure in 3D memory devices has a non-smooth lateral surface with protrusions, leading to current drop issues due to a tortuous current path, which worsens as the thickness of protrusions increases.
Innovation Solution
The inter-deck plug is designed with a smooth lateral surface, and the upper memory film fully fills the recess above the plug, allowing current to flow directly along the semiconductor channel and the plug's surface, minimizing current drop by eliminating tortuous paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the inter-deck plug has a non-smooth lateral surface with protrusions, then the structural formation is simplified, but current drop increases due to tortuous current path
Solution Approach 1:
The inter-deck plug is designed with a smooth lateral surface without protrusions, creating a curved or cylindrical geometry that allows current to flow directly along the plug's surface. This curvature eliminates the tortuous current path caused by protrusions, reducing current drop and improving electrical reliability while maintaining ease of manufacture through standard plug formation processes.
2Strength
If the protrusion thickness increases, then the mechanical strength of the plug is improved, but current drop worsens due to increased path tortuosity
Solution Approach 1:
By eliminating protrusions and providing a smooth lateral surface, the plug achieves optimal current flow geometry without the trade-off of increased path tortuosity. The smooth cylindrical or curved surface allows current to flow directly along the plug surface, preventing current drop while maintaining sufficient mechanical strength through the plug's overall structure and material properties rather than surface protrusions.
3Ease of manufacture
If the upper memory film does not fully fill the recess above the plug, then the fabrication process is simplified, but current path continuity is compromised
Solution Approach 1:
The upper memory film is designed to fully fill the recess above the inter-deck plug during the fabrication process. This preliminary action ensures that the current path is continuously maintained from the first semiconductor channel through the plug to the second semiconductor channel. The filling occurs as part of the standard memory film deposition process, maintaining fabrication simplicity while ensuring current path continuity and electrical reliability.
Data Source
Figure 1A
Figure 1B
Figure 2
AI summary
A 3D memory device (200) having an inter-deck plug (212) and method for forming the same are disclosed. The 3D memory device (200) includes a substrate, a first memory deck (202A) including interleaved conductor and dielectric layers above the substrate, a second memory deck (202B) including interleaved conductor and dielectric layers above the first memory deck (202A), and a first and a second channel (208, 210) structure each extending vertically through the first or second memory deck (202A, 202B). The first channel (208) structure includes a first memory film (214) and semiconductor channel (216) along a sidewall of the first channel (208) structure, and an inter-deck plug (212) in an upper portion of the first channel (208) structure and in contact with the first semiconductor channel (216). A lateral surface of the inter-deck plug (212) is smooth. The second channel (210) structure includes a second memory film (228) and semiconductor channel (230) along a sidewall of the second channel (210) structure. The second semiconductor channel (230) is in contact with the inter-deck plug (212).