Inter-Die Composite Dielectric Structure for Warpage Reduction
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Solution Overview
Problem
Three-dimensional semiconductor devices experience stress-induced warpage due to mismatched thermal expansion and contraction of semiconductor dies and traditional dielectric materials used in inter-die gaps, leading to deformation and potential cracking during cooling processes.
Innovation Solution
Implementing a warpage defense gap fill structure between semiconductor dies using a combination of dielectric materials with varying densities and void regions, such as air or nitrogen, to mitigate stress and reduce deformation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If traditional dielectric materials are used to fill inter-die gaps in three-dimensional semiconductor devices, then the packaging density and integration are improved, but stress-induced warpage and deformation occur due to mismatched thermal expansion and contraction
Solution Approach 1:
The patent applies composite materials by combining multiple dielectric materials with different densities in the gap fill structure. A first dielectric material with lower density and a second dielectric material with higher density are used together to create a composite structure that balances thermal expansion coefficients, thereby reducing stress-induced warpage while maintaining packaging density.
Solution Approach 2:
The patent applies local quality by positioning specific dielectric materials at different locations within the gap fill structure. The first dielectric material (lower density) and second dielectric material (higher density) are strategically placed to locally compensate for thermal stress variations, with the understanding that different regions experience different thermal stresses during cooling processes.
2Manufacturing precision
If dielectric materials with mismatched thermal expansion coefficients are used in inter-die gaps, then integration density is improved, but cracking and deformation occur during cooling processes
Solution Approach 1:
The patent uses composite dielectric materials to resolve the contradiction between integration density and device reliability. By combining materials with different thermal expansion properties, the structure can accommodate thermal stresses without cracking, ensuring reliability while maintaining high integration density through effective gap filling.
Solution Approach 2:
The patent applies parameter changes by carefully selecting and adjusting the density parameters of different dielectric materials. The first dielectric material has a lower density and the second has a higher density, creating a gradient that matches thermal expansion characteristics and prevents cracking during thermal cycling while maintaining the desired integration density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a composite dielectric material structure with varying densities and voids effectively reduces stress-induced warpage and cracking in semiconductor devices, enhancing their structural integrity and reliability.
Implementation Method 1
stress-induced warpage due to mismatched thermal expansion and contraction of semiconductor dies and traditional dielectric materials
Data Source
AI summary
A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.