Inter-Die Dielectric Gap Fill Structure for Warpage Resistance
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Solution Overview
Problem
Three-dimensional semiconductor devices experience stress-induced warpage due to mismatched thermal expansion and contraction of semiconductor dies and traditional dielectric materials used in inter-die gaps, leading to deformation and potential cracking.
Innovation Solution
Implementing a warpage defense gap fill structure with a combination of dielectric materials of varying densities and void regions, such as air or nitrogen, to mitigate stress and reduce deformation during thermal cycles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional dielectric materials are used to fill inter-die gaps in three-dimensional semiconductor devices, then the device structure is simple and manufacturing is easy, but stress-induced warpage and deformation occur due to mismatched thermal expansion and contraction
Solution Approach 1:
The patent applies composite materials by combining multiple dielectric materials with different densities in the gap fill structure. Specifically, it uses a first dielectric material (e.g., silicon oxide) and a second dielectric material (e.g., silicon nitride or silicon oxynitride) with different thermal expansion coefficients and densities to create a composite structure that better matches the thermal expansion characteristics of the semiconductor dies, thereby reducing stress-induced warpage while maintaining manufacturing feasibility
Solution Approach 2:
The patent implements local quality by creating regions with different dielectric material compositions at different locations within the gap fill structure. The structure includes a first region with a first dielectric material and a second region with a second dielectric material, where each region is positioned to address local stress distribution requirements. This localized material differentiation allows the structure to better accommodate thermal expansion variations across different areas of the semiconductor device
2Reliability
If multiple dielectric materials with varying densities are used in the gap fill structure, then stress-induced warpage is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The patent applies segmentation by dividing the gap fill structure into distinct regions, each filled with a different dielectric material. The structure is segmented into a first region containing a first dielectric material and a second region containing a second dielectric material with different density. This segmentation allows each material to be deposited and processed independently using standard semiconductor fabrication techniques, making the manufacturing process more manageable despite the increased material complexity
Solution Approach 2:
The patent utilizes parameter changes by varying the density and composition of dielectric materials in different regions of the gap fill structure. By changing the material parameters (density, thermal expansion coefficient) from uniform to varied, the structure can better accommodate thermal stress during processing and operation. The first dielectric material has a first density and the second dielectric material has a second density different from the first, allowing optimization of stress distribution while using established deposition and processing methods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure effectively reduces stress-induced warpage and deformation in semiconductor devices by utilizing dielectric materials with different densities and void regions, enhancing the stability and reliability of the stacked semiconductor structure.
Implementation Method 1
stress-induced warpage due to mismatched thermal expansion and contraction of semiconductor dies and traditional dielectric materials
Data Source
AI summary
A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.