Inter-Die Ground Connector Layout for Low-Crosstalk Packaging

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Solution Overview

Problem

Existing semiconductor package structures face challenges in reducing crosstalk between electronic components due to increasing integration density, which leads to increased conductive paths and parasitic inductance.

Innovation Solution

The introduction of an inter-die connector that forms an electrical connection between adjacent semiconductor dies, directly connecting their grounding lines without additional redistribution layers, thereby reducing the conductive path and minimizing crosstalk and parasitic inductance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If integration density of electronic components is increased, then more components can be integrated into a given area, but crosstalk between conductive paths increases

Engineering Contradiction:
Improveintegration densityVSAvoidcrosstalk
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

A ground shield structure is introduced as an intermediary element between adjacent conductive paths. This ground shield acts as a mediator that blocks electromagnetic interference and crosstalk between signal lines, allowing higher integration density without proportionally increasing crosstalk. The ground shield is positioned between conductive paths and connected to ground potential, creating an electromagnetic barrier that reduces harmful coupling between adjacent traces.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Area of stationary object

If integration density is increased, then package area is reduced, but parasitic inductance in conductive paths increases

Engineering Contradiction:
Improvepackage areaVSAvoidparasitic inductance
Core Design Contradiction:
Area of stationary objectVSObject-generated harmful factors

Solution Approach 1:

The solution moves the grounding function from a two-dimensional planar layout to a three-dimensional vertical structure. Ground shields are positioned vertically between conductive paths, extending in the thickness direction of the package. This vertical dimension allows ground connections to be made closer to signal lines without increasing planar area, thereby reducing loop area and parasitic inductance while maintaining small package footprint.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Ease of manufacture

If conventional semiconductor package structures are used, then manufacturing is simpler, but crosstalk reduction is insufficient

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidcrosstalk
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The ground shield structure serves multiple functions simultaneously: it provides electromagnetic shielding between adjacent conductive paths, acts as a reference plane for signal routing, and offers additional ground connection points. This multi-functionality allows crosstalk reduction to be achieved without adding separate dedicated shielding structures, thereby maintaining manufacturing simplicity while effectively reducing crosstalk in high-density packages.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12334444B2Semiconductor package structure and method for forming the same
Publication Date: 2025.06.17 MEDIATEK INC
  • US12334444B2 patent drawing
  • US12334444B2 patent drawing
  • US12334444B2 patent drawing

AI summary

A semiconductor package structure includes a first semiconductor die and a second semiconductor die neighboring the first semiconductor die. The first semiconductor die includes a first edge, a second edge opposite the first edge, and a first metal layer exposed from the second edge. The second semiconductor includes a third edge neighboring the second edge of the first semiconductor die, a fourth edge opposite the third edge, and a second metal layer exposed from the third edge. The first metal layer of the first semiconductor die is electrically connected to the second metal layer of the second semiconductor die.