Inter-Die RF Package Using Compound Semiconductors for Low-Loss 5G
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Solution Overview
Problem
Current RF circuits in high-frequency wireless applications, such as 5G and WiGig, face challenges with low-quality passive components and high power losses due to silicon substrates, leading to reduced transmission range and increased thermal requirements.
Innovation Solution
The integration of high-frequency components using non-CMOS technologies like GaAs and GaN, along with integrated passive devices (IPDs) on compound semiconductor materials, forms an inter die fabric on package, optimizing system partitioning and reducing parasitic inductance for improved performance and thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon substrates are used for RF circuits in high-frequency wireless applications, then manufacturing ease and cost are improved, but electrical performance deteriorates due to low-quality passive components and high power losses
Solution Approach 1:
The patent employs compound semiconductor materials (such as GaAs, GaN, InP) combined with silicon substrates to create a composite structure. The compound semiconductor layer provides high-quality passive components and low loss characteristics for high-frequency operation, while the silicon substrate offers manufacturing advantages and cost benefits. This composite approach resolves the contradiction by integrating the strengths of both material systems.
2Device complexity
If silicon substrates are used for RF circuits, then device complexity is reduced, but transmission range deteriorates due to high power losses
Solution Approach 1:
By using compound semiconductor materials for the active RF circuitry layer on top of the silicon substrate, the patent achieves low power loss characteristics essential for extended transmission range while maintaining the manufacturing simplicity of silicon-based processes. The compound semiconductor layer minimizes resistive losses and improves quality factor of passive components.
3Ease of manufacture
If silicon substrates are used for high-frequency communication devices, then ease of manufacture is improved, but thermal management deteriorates due to increased thermal requirements
Solution Approach 1:
The patent utilizes compound semiconductor materials that inherently offer better thermal conductivity and heat dissipation characteristics compared to standard silicon RF circuits. The composite structure allows efficient heat management while maintaining manufacturing advantages, addressing the thermal requirements for high-frequency operation.
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AI summary
Embodiments of the invention include a microelectronic device that includes an overmolded component having a first die with a silicon based substrate. A second die is coupled to the first die with the second die being formed with compound semiconductor materials in a different substrate. A substrate is coupled to the first die. The substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.