2D Material Semiconductor Contacts Using Intercalation Layers
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Solution Overview
Problem
As semiconductor devices become smaller, the electrical characteristics of silicon-based channels reach a limit, and 2-dimensional materials, while offering higher charge mobility, face high contact resistance with other structures.
Innovation Solution
Incorporating a 2-dimensional material channel with intercalation material in the contact patterns to reduce contact resistance, using a multi-layered structure with transition metal dichalcogenides and metal electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a 2-dimensional material channel is used, then charge mobility is improved, but contact resistance with other structures increases
Solution Approach 1:
A contact layer comprising a 2-dimensional material with intercalation material is introduced as an intermediary between the source/drain electrodes and the channel. This contact layer serves as a mediator that reduces contact resistance while preserving the high charge mobility of the channel, thus resolving the contradiction between improved charge mobility and increased contact resistance
Solution Approach 2:
The electrical parameters of the contact region are modified by introducing intercalation material into the 2-dimensional material contact layer. This changes the carrier concentration and electrical conductivity of the contact region, reducing contact resistance without compromising the charge mobility in the channel region
2Volume of moving object
If semiconductor devices are made smaller, then device size is reduced, but electrical characteristics of silicon channels reach a limit
Solution Approach 1:
The patent transitions from silicon-based channels to 2-dimensional material channels, fundamentally changing the material parameters. This material substitution enables continued scaling to smaller device sizes while maintaining or improving electrical characteristics such as charge mobility, overcoming the limitations of silicon at nanoscale dimensions
Solution Approach 2:
The device employs a composite structure combining 2-dimensional material channels with intercalation material in the contact regions. This composite approach leverages the high charge mobility of 2-dimensional materials in the channel while using the enhanced electrical properties of the intercalated contact layer to reduce contact resistance, achieving superior overall electrical characteristics in miniaturized devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves increased electrical characteristics by leveraging the high charge mobility of 2-dimensional materials and reduced contact resistance through the use of intercalation materials in contact patterns.
Implementation Method 1
Each of the first and second contact patterns includes a 2-dimensional material having an intercalation material disposed therein
Data Source
AI summary
A semiconductor device includes a channel on a substrate. The channel includes a 2-dimensional material. A gate insulating layer is on a first portion of the channel. A gate electrode is on a portion of the gate insulating layer. First and second contact patterns are on second portions of the channel, respectively. Each of the first and second contact patterns includes a 2-dimensional material having an intercalation material disposed therein. First and second source/drain electrodes are on the first and second contact patterns, respectively. Each of the first and second source/drain electrodes includes a metal.