Interconnect Air-Gap Structure for IC Heat Dissipation

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Solution Overview

Problem

The heat generated by operating semiconductor integrated circuits (ICs) affects their quality, and existing technologies have not effectively addressed this issue through material selection or structural adjustments.

Innovation Solution

The formation of an electronic device with interconnects that include air gaps and insulating layers with higher thermal conductivity than the interconnects, allowing for efficient heat dissipation and reduced signal interference.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If traditional solid interconnect structures are used, then structural simplicity is maintained, but heat dissipation efficiency is insufficient

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidstructural complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent introduces air gaps (porous structure) between adjacent interconnects to enhance heat dissipation. The air gaps create additional thermal pathways and reduce heat accumulation in dense interconnect regions, directly addressing the heat dissipation efficiency issue while adding structural complexity.

Inventive Principle:
Principle #31Porous materials

Solution Approach 2:

The patent employs a composite structure combining conductive interconnect materials with insulating materials filled in the air gaps. This composite approach allows simultaneous achievement of electrical connectivity, thermal management, and structural integrity, resolving the contradiction between heat dissipation and structural simplicity.

Inventive Principle:
Principle #40Composite materials

2Temperature

If air gaps are introduced between interconnects, then heat dissipation efficiency is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidmanufacturing complexity
Core Design Contradiction:
TemperatureVSEase of manufacture

Solution Approach 1:

The patent forms the air gaps and fills them with insulating materials during the interconnect formation process itself, before subsequent processing steps. This preliminary action integrates thermal management features into the standard fabrication flow, reducing the need for additional manufacturing steps and mitigating the increase in manufacturing complexity.

Inventive Principle:
Principle #10Preliminary action

3Temperature

If insulating layers with higher thermal conductivity are used, then heat dissipation is improved, but material selection constraints increase

Engineering Contradiction:
Improvethermal conductivityVSAvoidmaterial selection flexibility
Core Design Contradiction:
TemperatureVSAdaptability or versatility

Solution Approach 1:

The patent applies high thermal conductivity insulating materials specifically in regions where heat dissipation is most critical (between adjacent interconnects), while other insulating layers may use conventional materials. This localized approach optimizes thermal performance where needed without imposing material constraints across the entire device structure.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution improves the electrical performance and heat dissipation efficiency of ICs by using air gaps and high thermal conductivity insulating layers, enhancing the quality and functionality of semiconductor devices.

Implementation Method 1

an insulating layer laterally between an upper portion of the first interconnect and an upper portion of the second interconnect... insulating layers with higher thermal conductivity than the interconnects, allowing for efficient heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250210413A1Electronic device and manufacturing method thereof
Publication Date: 2025.06.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250210413A1 patent drawing
  • US20250210413A1 patent drawing
  • US20250210413A1 patent drawing

AI summary

An electronic device including a first interconnect, a second interconnect, and an insulating layer is provided. A lower portion of the first interconnect is laterally spaced apart from a lower portion of the second interconnect by an air gap. The insulating layer is disposed laterally between an upper portion of the first interconnect and an upper portion of the second interconnect.