Interconnect Air-Gap Structure for Capacitive Coupling Reduction
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Solution Overview
Problem
As semiconductor devices evolve with higher performance and more functionality, the reduced dimensions and spacing between conductive features lead to increased capacitive coupling, resulting in higher power consumption and RC time constants, which existing technologies struggle to address effectively.
Innovation Solution
The implementation of separate barrier layers on neighboring conductive features, combined with air gaps and metal oxide layers, reduces capacitive coupling and line-to-line leakage by preventing conductive features from forming between adjacent portions, while using support and blocking layers to maintain structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the distance between adjacent conductive features is decreased to increase device density, then the device density increases, but the capacitive coupling between conductive features increases
Solution Approach 1:
The patent introduces an intermediary air gap structure between adjacent conductive features. This air gap acts as a mediator that reduces the direct capacitive coupling between conductors while maintaining the reduced spacing needed for high device density. The air gap material (low-k dielectric) provides electrical isolation and reduces parasitic capacitance between neighboring conductive elements.
Solution Approach 2:
The patent applies different dielectric materials with specific properties in different locations. Low-k dielectric materials are used in regions where capacitive coupling needs to be reduced, while maintaining other functional requirements in different areas. This localized application of specific material properties allows optimization of capacitive coupling reduction without compromising overall device performance.
2Adaptability or versatility
If the spacing between conductive features is reduced to increase integration, then the device functionality increases, but the power consumption increases due to capacitive coupling
Solution Approach 1:
The air gap structure serves as an intermediary that reduces capacitive coupling between closely spaced conductive features. By introducing this low-k dielectric medium, the patent reduces the parasitic capacitance that would otherwise cause increased power consumption through leakage currents and charging/discharging effects, thereby enabling closer spacing without proportional power increases.
Solution Approach 2:
The patent changes the dielectric constant parameter of the material between conductive features by using low-k dielectric materials and air gaps. This parameter change reduces the capacitance value in the RC time constant equation, thereby reducing power consumption while maintaining the reduced spacing necessary for high device functionality and integration.
3Length of moving object
If the dimensions of conductive features are reduced to increase density, then the device size decreases, but the RC time constant increases due to increased capacitance
Solution Approach 1:
The patent changes the dielectric constant parameter by introducing air gaps and low-k dielectric materials between conductive features. This parameter change directly reduces the capacitance component of the RC time constant, thereby reducing signal propagation delays and improving device performance despite reduced feature dimensions that increase field overlap and capacitance.
Solution Approach 2:
The air gap structure acts as an intermediary that reduces capacitive coupling between adjacent conductive features. By placing this low-k dielectric medium in the region between conductors, the patent reduces the parasitic capacitance that would otherwise increase the RC time constant, thereby maintaining signal speed despite reduced feature dimensions.
Data Source
AI summary
An interconnection structure, along with methods of forming such, are described. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, and a conductive layer disposed over the dielectric layer. The conductive layer includes a first portion and a second portion adjacent the first portion, and the second portion of the conductive layer is disposed over the first conductive feature. The structure further includes a first barrier layer in contact with the first portion of the conductive layer, a second barrier layer in contact with the second portion of the conductive layer, and a support layer in contact with the first and second barrier layers. An air gap is located between the first and second barrier layers, and the dielectric layer and the support layer are exposed to the air gap.