Semiconductor Interconnect Structure With Single-Layer Barrier Adhesion
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Solution Overview
Problem
The reduction in size of active and passive devices in semiconductor technology has complicated the formation and structure of interconnects, leading to increased complexity and defects, necessitating improvements for smaller, cheaper, and more efficient devices.
Innovation Solution
The development of a barrier/adhesion layer comprising a single material with a layered structure, which reduces thickness and enhances conductive material volume while suppressing scattering effects at the interface, thereby reducing interconnect resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the size of active and passive devices is reduced, then device miniaturization is achieved, but interconnect formation complexity and defects increase
Solution Approach 1:
The patent combines the barrier layer and adhesion layer into a single integrated layer formed from one material (e.g., tantalum). This merging eliminates the interface between separate barrier and adhesion layers, simplifying the interconnect structure and reducing formation complexity while maintaining both barrier and adhesion functions in a single layer at scaled dimensions
Solution Approach 2:
The single material layer performs multiple functions simultaneously: it acts as both a barrier layer (preventing diffusion) and an adhesion layer (providing bonding). This multi-functionality reduces the number of separate layers needed, simplifying the overall interconnect structure and reducing formation complexity in miniaturized devices
2Reliability
If traditional multi-layer barrier/adhesion structure is used, then coverage is provided, but interconnect resistance increases due to scattering effects
Solution Approach 1:
The patent extracts and eliminates the interface between separate barrier and adhesion layers by using a single continuous material layer. This removal of the interface eliminates the scattering effect that occurs at material boundaries, reducing interconnect resistance while the single layer maintains both barrier coverage and adhesion functions
Solution Approach 2:
The patent uses a homogeneous single-material layer instead of heterogeneous multi-layer structure. This homogeneity eliminates interfaces and associated scattering effects, reducing interconnect resistance while the layer maintains uniform barrier and adhesion properties throughout its thickness
Data Source
AI summary
A device includes a substrate, a dielectric layer over the substrate, and a conductive interconnect in the dielectric layer. The conductive interconnect includes a barrier/adhesion layer and a conductive layer over the barrier/adhesion layer. The barrier/adhesion layer includes a material having a chemical formula MXn, with M being a transition metal element, X being a chalcogen element, and n being between 0.5 and 2.