Semiconductor Interconnect Barrier Opening for Diffusion Control
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Solution Overview
Problem
The diffusion of connection material into dielectric layers in semiconductor devices can cause short circuits and affect yield, as existing technologies fail to effectively prevent material diffusion and improve electrical conduction efficiency between connection structures.
Innovation Solution
A method for preparing semiconductor devices involves forming a first barrier layer with an opening on the sidewall and bottom of a second window, which prevents the diffusion of connection material into dielectric layers and allows direct contact between connection structures, thereby reducing resistance and enhancing electrical conduction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If connection material is used to form connection structures, then electrical conduction is achieved, but material diffusion into dielectric layers causes short circuits
Solution Approach 1:
A barrier layer is introduced as an intermediary component between the connection material and the dielectric layer. This barrier layer prevents direct contact and diffusion of connection material into the dielectric layer, while still allowing electrical conduction through the connection structure. The barrier layer thus mediates between the conflicting requirements of maintaining electrical conduction and preventing material diffusion.
Solution Approach 2:
The connection structure is segmented into multiple functional layers: a connection material layer for electrical conduction and a separate barrier layer for preventing diffusion. This segmentation allows each layer to perform its specific function independently, with the connection material providing conductivity and the barrier layer preventing diffusion into the dielectric layer.
2Object-affected harmful factors
If barrier layers are added to prevent material diffusion, then short circuits are prevented, but electrical resistance increases
Solution Approach 1:
The barrier layer's thickness and material composition are optimized to achieve the right balance between diffusion prevention and electrical conduction. By controlling the barrier layer parameters (thickness, material properties), the design prevents material diffusion while maintaining acceptable electrical resistance levels.
Solution Approach 2:
The connection structure uses composite material layers combining different properties: a conductive connection material layer for low resistance and a barrier layer with diffusion-resistant properties. The composite structure leverages the strengths of each material type to achieve both diffusion prevention and good electrical conduction.
Data Source
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AI summary
The present disclosure relates to a semiconductor device and a preparation method thereof. The method for preparing a semiconductor device comprises: providing a first dielectric layer; forming a first window in the first dielectric layer; forming a first connection structure in the first window; forming a second dielectric layer on the first dielectric layer, the second dielectric layer having a second window from which at least the first connection structure is exposed; forming a first barrier layer on the sidewall and bottom of the second window, the first barrier layer comprising an opening from which part of the first connection structure is exposed; and forming a second connection structure in the second window. The method for preparing a semiconductor device can prevent the diffusion of the second connection material into the first dielectric layer and the second dielectric layer, and also can improve the electrical conduction efficiency between the first connection structure and the second connection structure and thus improve the performance of the device.