Interconnect Electron Barrier Layers for Leakage Control
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Solution Overview
Problem
The scaling down of semiconductor devices has increased the complexity of interconnect structures, leading to electron migration between adjacent conductive structures, which results in current leakage and degradation of semiconductor device performance.
Innovation Solution
The implementation of electron barrier layers and nitride capping layers in interconnect structures, formed through plasma treatment with low bombardment energy, to create electron trap sites that capture migrating electrons, thereby preventing electron migration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to increase storage capacity and processing speed, then device performance and storage capacity are improved, but electron migration between adjacent conductive structures increases causing current leakage
Solution Approach 1:
An electron barrier layer is introduced as an intermediary component between adjacent conductive structures. This layer acts as a mediator that blocks electron migration while allowing the scaled-down device structure to maintain its high-density interconnect architecture, thus preventing current leakage without sacrificing processing speed
Solution Approach 2:
The electron barrier layer is formed using a composite material structure comprising a first material layer and a second material layer with different properties. The first material provides electron barrier functionality while the second material provides etch selectivity, creating a composite structure that simultaneously addresses both electron migration prevention and manufacturing requirements
2Reliability
If electron barrier layers are added to prevent electron migration, then reliability is improved by 20 to 30 times, but device complexity increases
Solution Approach 1:
The electron barrier layer is segmented into multiple distinct material layers, each performing a specific function. This segmentation allows each layer to be optimized independently for its specific purpose (electron barrier vs. etch selectivity), making the overall complex structure more manageable and manufacturable
Solution Approach 2:
The electron barrier layer structure is designed to serve multiple functions simultaneously: it provides electron barrier properties to prevent migration, provides etch selectivity for manufacturing processes, and maintains compatibility with existing interconnect architectures. This multi-functionality reduces the need for additional separate components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The electron barrier layers and nitride capping layers significantly improve the reliability of interconnect structures by 20 to 30 times compared to structures without these layers, reducing electron migration and enhancing semiconductor device performance.
Implementation Method 1
The implementation of electron barrier layers and nitride capping layers in interconnect structures, formed through plasma treatment with low bombardment energy, to create electron trap sites that capture migrating electrons
Data Source
AI summary
A method for improving reliability of interconnect structures for semiconductor devices is disclosed. The method includes forming a contact structure on a transistor and forming a metallization layer on the contact structure. The forming the metallization layer includes depositing an inter-metal dielectric (IMD) layer on the transistor, forming an opening within the IMD layer to expose a top surface of the contact structure, depositing a metallic layer to fill the opening, forming an electron barrier layer within the IMD layer, and forming a capping layer within the metallic layer. The electron barrier layer has a hole carrier concentration higher than a hole carrier concentration of a portion of the IMD layer underlying the electron barrier layer. The capping layer has a hole carrier concentration higher than a hole carrier concentration of a portion of the metallic layer underlying the capping layer.