Semiconductor device and method of making an interconnect bridge with integrated passive devices

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Solution Overview

Problem

Semiconductor devices face challenges in interconnecting multiple semiconductor die within a system-in-package (SiP) module and finding sufficient footprint space for integrated passive devices.

Innovation Solution

The integration of an interconnect bridge with integrated passive devices (IPDs) is formed over a substrate using common semiconductor manufacturing steps, allowing IPDs to be easily integrated onto semiconductor die, reducing the need for external discrete passive components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If discrete passive devices are used in SiP modules, then electrical functions are supported, but footprint space is insufficient

Engineering Contradiction:
Improvefootprint spaceVSAvoiddiscrete passive devices
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent merges passive devices (resistors, capacitors, inductors) with the interconnect bridge structure by forming them using the same semiconductor manufacturing processes on the same substrate. This integration eliminates the need for separate discrete passive devices, reducing footprint space while maintaining all necessary electrical functions.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The interconnect bridge is designed to serve multiple functions simultaneously: it provides electrical interconnection between semiconductor die and integrates passive devices for signal processing. This multi-functionality reduces the overall component count and footprint space required in the SiP module.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Area of stationary object

If integrated passive devices are formed over semiconductor die, then footprint space is optimized, but manufacturing complexity increases

Engineering Contradiction:
Improvefootprint spaceVSAvoidmanufacturing process
Core Design Contradiction:
Area of stationary objectVSEase of manufacture

Solution Approach 1:

The patent combines the formation of passive devices with the existing interconnect bridge manufacturing process. Both are formed using the same semiconductor fabrication steps (deposition, etching, patterning) on the same substrate, eliminating the need for separate manufacturing processes and reducing overall manufacturing complexity.

Inventive Principle:
Principle #5Merging (Combining)

3Adaptability or versatility

If multiple semiconductor die are interconnected, then system functionality is enhanced, but interconnection complexity increases

Engineering Contradiction:
Improvesystem functionalityVSAvoidinterconnection structure
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The interconnect bridge is designed as a multi-functional component that simultaneously provides mechanical support, electrical interconnection, and signal processing capabilities through integrated passive devices. This reduces the overall interconnection complexity by consolidating multiple functions into a single structure.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12482755B2Semiconductor device and method of making an interconnect bridge with integrated passive devices
Publication Date: 2025.11.25 STATS CHIPPAC LTD
  • US12482755B2 patent drawing
  • US12482755B2 patent drawing
  • US12482755B2 patent drawing

AI summary

A semiconductor device has a first substrate. A first semiconductor die and second semiconductor die are disposed over the substrate. An interconnect bridge is disposed over the first semiconductor die and second semiconductor die. The interconnect bridge has a second substrate. A conductive trace is formed over the second substrate. The conductive trace is electrically coupled from the first semiconductor die to the second semiconductor die. An IPD is also formed over the second substrate. The IPD is electrically coupled between the first semiconductor die and second semiconductor die. An encapsulant is deposited over the first substrate, first semiconductor die, second semiconductor die, and interconnect bridge.