Interconnect Bridge With Integrated Passives for Compact SiP Packaging
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Solution Overview
Problem
Semiconductor devices face challenges in interconnecting multiple semiconductor die within a system-in-package (SiP) module and finding sufficient footprint space for integrated passive devices.
Innovation Solution
The integration of an interconnect bridge with integrated passive devices (IPDs) is formed over a substrate using common semiconductor manufacturing steps, allowing IPDs to be easily integrated onto semiconductor die, reducing the need for external discrete passive components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If discrete passive devices are used in SiP modules, then electrical functions can be supported, but footprint space is insufficient and device complexity increases
Solution Approach 1:
The patent merges the interconnect bridge structure with passive device functionality into a single integrated structure. The passive devices (resistors, capacitors, inductors) are formed directly within the interconnect bridge layers, combining what were previously separate components into one unified element that reduces footprint and simplifies the overall device architecture
Solution Approach 2:
The interconnect bridge is designed to serve multiple functions simultaneously: it provides electrical interconnection between semiconductor die and incorporates passive devices for signal processing, filtering, and impedance matching. This multi-functional approach eliminates the need for separate discrete passive components
2Area of stationary object
If integrated passive devices are formed over semiconductor die, then footprint space is optimized, but manufacturing complexity increases
Solution Approach 1:
The passive devices are formed during the same manufacturing process steps as the interconnect bridge, before final assembly. Conductive layers are deposited and patterned to create both the interconnect pathways and passive device structures in advance, integrating passive device fabrication into the existing manufacturing flow rather than adding separate processing steps
Solution Approach 2:
The patent utilizes variations in conductive layer thickness, material composition, and geometric configuration to create different passive device types (resistors, capacitors, inductors) from the same base manufacturing process. By changing physical and chemical parameters of the conductive layers, multiple passive device functions are achieved without requiring different manufacturing processes
Data Source
AI summary
A semiconductor device has a first substrate. A first semiconductor die and second semiconductor die are disposed over the substrate. An interconnect bridge is disposed over the first semiconductor die and second semiconductor die. The interconnect bridge has a second substrate. A conductive trace is formed over the second substrate. The conductive trace is electrically coupled from the first semiconductor die to the second semiconductor die. An IPD is also formed over the second substrate. The IPD is electrically coupled between the first semiconductor die and second semiconductor die. An encapsulant is deposited over the first substrate, first semiconductor die, second semiconductor die, and interconnect bridge.