Interconnect Bump Traversing Passivation Layer for Thermal and Electrical Connectivity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor dies face challenges in achieving high functionality, high density, low cost, small size, and effective heat dissipation while maintaining efficient electrical connections, as the number of electrical connections and heat dissipation increase with size and power requirements.
Innovation Solution
A semiconductor die design featuring interconnect bumps with high thermal conductivity and low electrical resistivity, protruding through a passivation layer to provide both thermal and electrical connectivity to device fingers, enhancing heat dissipation and external electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of electrical connections and functionality of semiconductor die increase, then the functionality and density improve, but the amount of heat to be discarded and complexity increase
Solution Approach 1:
The interconnect bump merges electrical connection and thermal management functions into a single integrated structure. The bump simultaneously provides electrical connectivity between dies and serves as a heat dissipation pathway, eliminating the need for separate thermal vias or heat sinks and thereby reducing overall device complexity while maintaining high functionality
Solution Approach 2:
The interconnect bump is designed to perform multiple functions: electrical interconnection, thermal conduction, and mechanical bonding. This multi-functional approach allows the same structure to address multiple requirements (electrical connectivity and heat dissipation) without adding additional components, thus improving functionality while controlling complexity
2Adaptability or versatility
If the number of electrical connections increases, then functionality improves, but heat dissipation requirements increase
Solution Approach 1:
The interconnect bump combines electrical conduction and thermal conduction pathways into a single structure. By using materials with high electrical conductivity (such as copper or gold) that also possess high thermal conductivity, the bump simultaneously handles both electrical signals and heat dissipation, addressing both functionality and temperature management requirements
Solution Approach 2:
The interconnect bump acts as an intermediary structure between the active device regions and the external environment. It mediates the transfer of both electrical energy and thermal energy from the densely packed device fingers to the external circuitry and heat sinks, enabling high functionality while managing the resulting heat dissipation challenges
3Reliability
If interconnect bump provides both thermal and electrical connectivity, then thermal and electrical connectivity improve, but manufacturing precision requirements increase
Solution Approach 1:
The manufacturing process utilizes parameter changes during bump formation (such as controlled electroplating thickness, reflow soldering temperature profiles, or laser annealing parameters) to achieve the desired dual functionality. By precisely controlling these process parameters, the bump structure achieves both excellent thermal and electrical connectivity while maintaining manufacturability through standardized processes
Solution Approach 2:
The interconnect bump employs composite material structures (such as copper core with gold plating, or tungsten-nickel-gold layered structures) that combine materials with complementary properties. These composite structures provide both high electrical conductivity and high thermal conductivity while offering improved manufacturability and tolerance to manufacturing variations compared to single-material approaches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves thermal and electrical connectivity, enabling effective heat dissipation and external electrical connections, addressing the challenges of increasing electrical connections and heat dissipation while minimizing size and cost.
Implementation Method 1
the first interconnect bump is configured to conduct heat away from the first semiconductor device
Implementation Method 2
the first interconnect bump is further configured to provide an external electrical connection to the first semiconductor device. The first interconnect bump may have high thermal conductivity and low electrical resistivity
Data Source
AI summary
A semiconductor die, which includes a first semiconductor device, a first passivation layer, and a first interconnect bump, is disclosed. The first passivation layer is over the first semiconductor device, which includes a first group of device fingers. The first interconnect bump is thermally and electrically connected to each of the first group of device fingers. Additionally, the first interconnect bump protrudes through a first opening in the first passivation layer.