Interconnect Structure With Composite Porous Films

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Solution Overview

Problem

Conventional interconnect structures with low-k porous films suffer from weak mechanical strength, leading to damage during manufacturing processes like chemical mechanical planarization, which reduces yield.

Innovation Solution

The use of multiple porous films with different pore sizes, where smaller pores enhance mechanical strength and larger pores maintain a low dielectric constant, by alternatingly stacking films with pore sizes ranging from 3 nm to 9 nm and adjusting thickness ratios to achieve desired properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a porous film is used to reduce parasitic capacitance, then the dielectric constant is lowered, but the mechanical strength becomes weak

Engineering Contradiction:
Improvedielectric constantVSAvoidmechanical strength
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The patent uses a composite porous film structure combining two different porous films with distinct pore sizes. The first porous film has pores of 3-6 nm diameter, while the second porous film has pores of 6-9 nm diameter. This composite structure allows the smaller pores to provide mechanical support and strength, while the larger pores contribute to lowering the dielectric constant, thus resolving the contradiction between mechanical strength and dielectric performance.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies local quality by assigning different functional roles to different regions of the porous film structure. The first porous film with smaller pores (3-6 nm) is positioned to provide mechanical strength where needed, while the second porous film with larger pores (6-9 nm) is positioned to optimize dielectric constant reduction. This spatial differentiation of functional properties resolves the contradiction between strength and dielectric constant.

Inventive Principle:
Principle #3Local quality

2Speed

If the porous film is made thinner to reduce delay, then the signal transmission speed increases, but the film becomes more susceptible to damage

Engineering Contradiction:
Improvesignal transmission speedVSAvoidfilm durability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The composite structure of two porous films with different pore sizes creates a mechanically robust yet electrically optimized structure. The smaller pores in the first porous film provide structural reinforcement that prevents film damage, while the overall thin-film design maintains fast signal transmission. This resolves the contradiction between speed and durability.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the mechanical strength of interconnect structures while maintaining a low dielectric constant, enhancing their durability and manufacturing yield.

Implementation Method 1

The porous film contains pores with a dielectric constant of 1, which is lower than the dielectric constant of material surrounding the pores, offering the porous film a lower dielectric constant.

Methodology Applied
Scientific EffectPorosity: Porosity

Implementation Method 2

small pores can support greater external force to improve mechanical strength of the porous films

Methodology Applied
Scientific EffectMechanical support through pore structure:

Data Source

PatentUS9136171B2Interconnect structure and fabrication method
Publication Date: 2015.09.15 SEMICON MFG INT (SHANGHAI) CORP
  • US9136171B2 patent drawing
  • US9136171B2 patent drawing
  • US9136171B2 patent drawing

AI summary

An interconnect structure and fabrication method are provided. A substrate can include a semiconductor device disposed in the substrate. At least two porous films can be formed over the substrate and can include a first porous film having a first pore size, and a second porous film having a second pore size formed on the first porous film. The first porous size and the second porous size are different. The interconnect can be formed through the plurality of porous films to provide electrical connection to the semiconductor device in the substrate.