Interconnect Dielectric Stack for Low-Capacitance Fan-Out Packaging
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Ensuring the reliability of integrated fan-out packages in the semiconductor industry, which are becoming increasingly compact due to reduced feature sizes, is a challenge.
Innovation Solution
A semiconductor device with an interconnect structure featuring a specific arrangement of dielectric layers and conductive features, including a low-k dielectric layer between higher dielectric layers to reduce parasitic capacitance and enhance electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature size is reduced to increase integration density, then more components can be integrated into a given area, but package reliability deteriorates
Solution Approach 1:
The patent applies local quality by using different dielectric materials with different dielectric constants in different regions of the interconnect structure. Specifically, low-k dielectric material is used in regions where signal integrity is most critical, while higher-k dielectric materials are used in other regions. This localized optimization allows the structure to maintain high integration density while ensuring reliability in critical areas through reduced parasitic capacitance.
2Ease of manufacture
If conventional dielectric layers are used in interconnect structure, then manufacturing is simpler, but parasitic capacitance increases causing signal integrity degradation
Solution Approach 1:
The patent changes the dielectric parameter (dielectric constant) by incorporating low-k dielectric material with a dielectric constant less than 3.5, preferably less than 3.0, into the interconnect structure. This parameter change significantly reduces parasitic capacitance between conductive lines while maintaining compatibility with standard semiconductor manufacturing processes, thus resolving the contradiction between manufacturing simplicity and signal integrity.
3Area of stationary object
If integrated fan-out packages are made compact, then package area is reduced, but warpage increases affecting reliability
Solution Approach 1:
The patent applies local quality by strategically placing low-k dielectric material in specific regions of the compact package structure where stress accumulation would most affect warpage. This localized use of low-k material with different mechanical properties helps distribute and reduce internal stress in the compacted structure, thereby maintaining dimensional stability and reducing warpage while preserving the compact package footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides low insertion loss and improved signal integrity, making it suitable for high-speed and high-frequency applications in 3DIC, while also reducing warpage and enhancing reliability.
Implementation Method 1
a low-k dielectric layer between higher dielectric layers to reduce parasitic capacitance and enhance electrical performance
Data Source
AI summary
A semiconductor device includes an interconnect structure. The interconnect structure includes a first conductive line in a first dielectric layer, a conductive via in a second dielectric layer and a second conductive line in a third dielectric layer. The second dielectric layer is disposed between the first and third dielectric layers, and a dielectric constant of the second dielectric layer is smaller than a dielectric constant of the first dielectric layer and a dielectric constant of the third dielectric layer.