Interconnect Dielectric Foam Structure for Lower Capacitance Coupling
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Solution Overview
Problem
As semiconductor device dimensions decrease, the challenge of reducing capacitance coupling in semiconductor devices becomes significant, limiting further miniaturization and performance enhancement due to limitations in current manufacturing techniques.
Innovation Solution
The introduction of a dielectric foam structure with carbon dioxide gas-filled fluid gaps is used in the interconnection structure, which reduces capacitance by lowering the dielectric constant and improving the structural integrity of the semiconductor device, achieved through a process involving the formation of a conductive layer, patterning, and subsequent foaming and curing of a dielectric material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor device dimensions are reduced to increase density, then device functionality and performance improve, but capacitance coupling increases and manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The patent applies porous low-k dielectric materials with controlled void fractions (5-50%) to reduce capacitance coupling between adjacent conductive interconnects. The porous structure lowers the effective dielectric constant while maintaining mechanical integrity, enabling closer spacing of conductive features without increasing parasitic capacitance. This resolves the contradiction by allowing higher device density through reduced spacing while controlling capacitance effects.
Solution Approach 2:
The patent employs composite dielectric structures combining organic polymers (e.g., polysiloxane, polyimide) with inorganic fillers (e.g., silica, titania) to create low-k materials with tailored properties. The composite structure provides both the low dielectric constant needed for capacitance reduction and the mechanical strength required for manufacturing precision at reduced dimensions.
2Object-generated harmful factors
If dielectric constant is reduced to lower capacitance, then capacitance coupling decreases, but dielectric strength and reliability may be compromised
Solution Approach 1:
The patent uses composite dielectric materials combining low-k organic polymers with high-strength inorganic fillers. The organic matrix provides low dielectric constant (k<3.5) to reduce capacitance coupling, while the inorganic filler network (silica, titania, zirconia particles) maintains dielectric strength and breakdown voltage. This composite approach simultaneously achieves capacitance reduction and reliability preservation.
Solution Approach 2:
The patent implements local quality by creating regions of optimized dielectric properties - the porous low-k material is positioned specifically in high-field-stress regions between adjacent conductors where capacitance reduction is most critical, while maintaining adequate dielectric strength through controlled void distribution and filler placement.
3Object-generated harmful factors
If fluid gaps are introduced to reduce capacitance, then dielectric constant decreases, but structural integrity and manufacturing complexity increase
Solution Approach 1:
The patent employs self-service by incorporating photodecomposable compounds (diazones, triazones, oxadiazoles) within the dielectric material that automatically generate gas bubbles upon UV irradiation. This self-foaming mechanism creates the desired fluid gaps and porous structure without requiring external foam generation equipment or complex multi-step processes, simplifying manufacturing while achieving capacitance reduction.
Solution Approach 2:
The patent utilizes phase transition of the photodecomposable compounds - these compounds transition from solid/liquid state in the dielectric matrix to gaseous state upon UV exposure, creating bubbles and voids. This controlled phase transition generates the porous low-k structure and fluid gaps needed for capacitance reduction through a single irradiation step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces capacitance and enhances the performance of semiconductor devices by allowing for more precise control over the size and placement of fluid gaps within the dielectric foam, leading to improved electrical routing and reduced size constraints in semiconductor device design.
Implementation Method 1
The introduction of a dielectric foam structure with carbon dioxide gas-filled fluid gaps is used in the interconnection structure, which reduces capacitance by lowering the dielectric constant
Implementation Method 2
reduces capacitance by lowering the dielectric constant and improving the structural integrity of the semiconductor device
Data Source
AI summary
An interconnection structure, along with methods of forming such, are described. The interconnection structure includes a first portion of a conductive layer, a second portion of the conductive layer disposed adjacent the first portion of the conductive layer, and a dielectric foam disposed between the first and second portions of the conductive layer. The dielectric foam includes fluid gaps filled with carbon dioxide gas.