Semiconductor Interconnect Dielectrics That Resist Etch Damage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As the semiconductor industry advances with increased integration density and reduced feature sizes, the damage to interlayer dielectric (ILD) layers during the etch process affects the dielectric constant, leading to reliability issues.
Innovation Solution
The use of high-hardness dielectric materials such as silicon carbo-nitride (SiCN) or boron carbo-nitride (BCN) with a hardness greater than 10 GPa and a dielectric constant between 1.0 and 4.0, which are formed through specific deposition processes, to mitigate etch damage and improve mechanical strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional dielectric materials are used in ILD layers, then the etch process can proceed, but the dielectric layer suffers damage and the dielectric constant changes, leading to reliability issues
Solution Approach 1:
The patent changes the physical parameter of the dielectric material by selecting materials with hardness greater than 10 GPa (such as silicon carbo-nitride or boron carbo-nitride). This parameter change makes the dielectric layer resistant to etch damage while maintaining the required dielectric constant between 1.0 and 4.0, thereby resolving the contradiction between reliability and etch damage.
Solution Approach 2:
The patent employs composite dielectric materials such as silicon carbo-nitride (SiCN) or boron carbo-nitride (BCN) that combine multiple elements to achieve both high hardness (>10 GPa) and appropriate dielectric constant (1.0-4.0). This composite material approach allows the dielectric layer to withstand etch processes while maintaining electrical performance, thus resolving the contradiction between reliability and etch damage.
2Productivity
If feature sizes are reduced to increase integration density, then more components can be integrated, but the spacing between components is reduced making the dielectric layer more susceptible to etch damage
Solution Approach 1:
The patent changes the hardness parameter of the dielectric material to greater than 10 GPa, which provides sufficient mechanical strength and damage resistance even when the dielectric layer thickness is reduced to accommodate smaller feature sizes and higher integration density. This allows continued scaling while protecting against etch damage.
Solution Approach 2:
The patent applies the high-hardness dielectric material specifically in the ILD layers where etch damage occurs, providing localized protection in the critical regions where components are densely packed. This targeted application of enhanced material properties addresses the etch damage issue in high-density integration areas.
3Reliability
If the dielectric constant is changed due to etch damage, then the electrical performance is affected, but using higher hardness materials maintains the dielectric constant within optimal ranges
Solution Approach 1:
The patent uses composite materials like silicon carbo-nitride or boron carbo-nitride that inherently combine high hardness (>10 GPa) with controlled dielectric constant (1.0-4.0). The composite structure provides both the mechanical strength needed to resist etch damage and the electrical properties required for optimal performance, resolving the contradiction between reliability and mechanical strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These high-hardness dielectric materials effectively prevent etch damage, maintain the dielectric constant within optimal ranges, and enhance the thermal dissipation characteristics, thereby improving the reliability and performance of semiconductor devices.
Implementation Method 1
The first dielectric layer has a hardness higher than 10 GPa and a dielectric constant in a range between 1.0 and 4.0
Implementation Method 2
formed through specific deposition processes
Implementation Method 3
enhance the thermal dissipation characteristics
Data Source
AI summary
A first dielectric layer is formed on a semiconductor structure. The first dielectric layer has a hardness higher than 10 GPa and a dielectric constant in a range between 1.0 and 4.0. A trench is formed in the first dielectric layer. A conductive feature is formed in the trench in contact with the semiconductor structure. A second dielectric layer is formed over the first dielectric layer and the conductive feature. A via structure is formed in the second dielectric layer in contact with the conductive feature.