Semiconductor Interconnect Thermal Paths for High-Density Chip Cooling
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Solution Overview
Problem
As semiconductor devices undergo technological advancements with shrinking technology nodes, they face increased operating temperatures due to reduced chip area and higher transistor density, leading to thermal dissipation challenges.
Innovation Solution
Incorporating thermal conductive paths, including dummy features in the interconnect structure on both the front-side and back-side of the semiconductor chip, to enhance heat dissipation by forming a bonding layer with higher thermal conductivity than the dielectric layers, allowing for improved thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistor density is increased to improve integration density, then productivity is improved, but temperature increases due to thermal dissipation challenges
Solution Approach 1:
The patent segments the thermal management function by introducing separate thermal conductive paths (dummy features) within the interconnect structure. These dummy features are distinct from the functional interconnect elements, allowing heat to be conducted away through dedicated pathways without interfering with the electrical functionality of the active interconnects.
Solution Approach 2:
The patent introduces dummy features as intermediary elements that facilitate heat transfer. These dummy features act as thermal mediators between the high-density transistor regions and the heat sink, providing a conduit for thermal energy to flow from the hot spots generated by dense transistors to the surrounding cooler regions.
2Productivity
If chip area is reduced to improve integration density, then productivity is improved, but thermal dissipation capability deteriorates
Solution Approach 1:
The patent applies local quality by introducing thermal conductive paths specifically in regions where heat generation is highest. The dummy features are strategically placed within the interconnect structure near high-density transistor regions, providing localized thermal management where it is most needed without affecting the overall chip area.
Solution Approach 2:
The patent makes the interconnect structure multi-functional by having it serve both electrical connectivity and thermal management functions. The same interconnect structure that provides electrical pathways also incorporates dummy features that provide thermal pathways, allowing a single structure to perform dual functions and address both signal transmission and heat dissipation needs.
3Temperature
If dummy features are added to enhance thermal dissipation, then temperature is reduced, but device complexity increases
Solution Approach 1:
The patent merges the thermal management function with the existing interconnect structure. Rather than adding separate thermal management components, the dummy features are integrated into the interconnect layers, combining the electrical interconnect function with the thermal conduction function in a unified structure, thereby minimizing the increase in overall device complexity.
Solution Approach 2:
The patent changes the physical parameters of the interconnect structure by modifying material properties. The bonding layer is specified with higher thermal conductivity than the dielectric layers, and the dummy features are formed with specific dimensional parameters (width, length, depth) that optimize thermal conduction. These parameter changes enable enhanced thermal dissipation while maintaining structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the operating temperature of semiconductor devices by improving thermal dissipation, as demonstrated by a simulation showing an 18% temperature reduction in high resistance resistors from 45.8°C to 37.5°C.
Implementation Method 1
the bonding layer has a higher thermal conductivity than the dielectric layer of the front-side interconnect structure
Data Source
AI summary
A method includes forming a transistor over a front side of a substrate, in which the transistor comprises a channel region, a gate region over the channel region, and source/drain regions on opposite sides of the gate region; forming a front-side interconnect structure over the transistor, wherein the front-side interconnect structure includes a dielectric layer and conductive features; and bonding the front-side interconnect structure to a carrier substrate via a bonding layer, in which the bonding layer is between the front-side interconnect structure and the carrier substrate, and the bonding layer has a higher thermal conductivity than the dielectric layer of the front-side interconnect structure.