Interconnect Heat Dissipation Layer for Localized Heating Control
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Solution Overview
Problem
As semiconductor devices shrink in size, localized heating becomes a significant issue affecting device performance and reliability, particularly in interconnect structures where reduced dimensions lead to increased heat generation and reduced electromigration lifetime due to poor heat dissipation.
Innovation Solution
Incorporation of a heat dissipation layer with high thermal conductivity, such as Ru, W, or Ag, within the interconnect structure to disperse heat horizontally and reduce localized heating, while maintaining electrical isolation from conductive features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device dimensions are reduced to increase density, then productivity and functionality are improved, but localized heating increases and reliability deteriorates
Solution Approach 1:
A heat dissipation layer is introduced as an intermediary component between the conductive feature and the surrounding dielectric environment. This layer acts as a thermal mediator that facilitates heat transfer from the conductive feature to the surrounding structures, thereby reducing localized heating while maintaining the reduced device dimensions required for high productivity
Solution Approach 2:
The thermal conductivity parameter of the interconnect structure is changed by incorporating a heat dissipation layer with high thermal conductivity (greater than 25 W/m-K, preferably greater than 50 W/m-K). This parameter change enables more effective heat dissipation from the conductive feature, allowing the device to maintain high density while improving reliability through reduced localized heating
2Productivity
If device dimensions are reduced, then productivity is improved, but heat dissipation capability deteriorates
Solution Approach 1:
The heat dissipation layer serves as a thermal intermediary that compensates for the reduced heat dissipation capability inherent in smaller device dimensions. By positioning this high thermal conductivity layer adjacent to the conductive feature, the system achieves effective heat transfer despite the reduced overall device size
Solution Approach 2:
The interconnect structure is designed as a composite system combining the conductive feature (first material) with the heat dissipation layer (second material having different thermal properties). This composite structure leverages the high thermal conductivity of the heat dissipation layer to overcome the limited heat dissipation capability resulting from reduced device dimensions
3Reliability
If heat dissipation layer is added, then reliability is improved, but device complexity increases
Solution Approach 1:
The heat dissipation layer is applied locally rather than uniformly throughout the entire interconnect structure. It is positioned specifically adjacent to portions of the conductive feature where heat dissipation is most critical, thereby improving reliability without unnecessarily increasing the complexity of the entire device structure
Solution Approach 2:
The heat dissipation layer is segmented into discrete portions rather than forming a continuous layer. Each segment is positioned to address specific thermal management needs of adjacent conductive feature portions, allowing for simplified manufacturing and reduced overall structural complexity while maintaining effective heat dissipation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The heat dissipation layer effectively disperses heat, enhancing device performance by reducing localized heating and improving electromigration lifetime of conductive features in the interconnect structure.
Implementation Method 1
Incorporation of a heat dissipation layer with high thermal conductivity, such as Ru, W, or Ag, within the interconnect structure to disperse heat horizontally
Data Source
AI summary
An interconnect structure, along with methods of forming such, are described. In some embodiments, the structure includes a first dielectric layer disposed over one or more devices, a first conductive feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first conductive feature, and a second conductive feature disposed in the second dielectric layer. The second conductive feature is electrically connected to the first conductive feature. The structure further includes a heat dissipation layer disposed between the first and second dielectric layers, and the heat dissipation layer partially surrounds the second conductive feature and is electrically isolated from the first and second conductive features.