Metal Interconnect Hillock Prevention via Plasma Reactive Species
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Solution Overview
Problem
The formation of hillocks during the fabrication of metal interconnects in semiconductor devices leads to reduced yield and reliability, as they can cause short circuits and other defects in integrated circuits.
Innovation Solution
Generating reactive species in a deposition chamber before introducing the semiconductor substrate, and then treating the substrate with these species to remove residual oxide or organic layers, thereby preventing hillock formation during the interconnect fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional fabrication processes are used to deposit metal interconnects, then the interconnect structure is formed, but hillocks form on the surface causing reduced yield and reliability
Solution Approach 1:
The chamber is pre-charged with reactive species from source gas in the presence of plasma before the substrate is introduced. This preliminary action creates a controlled chemical environment that prevents hillock formation during subsequent metal deposition, thereby improving surface smoothness and interconnect reliability
Solution Approach 2:
The invention changes the chemical environment parameters by introducing reactive species and controlling plasma conditions in the deposition chamber. By adjusting gas composition, plasma power, and pressure parameters, the surface chemistry is modified to prevent hillock formation during metal interconnect deposition
2Ease of operation
If the deposition chamber is empty before substrate introduction, then the substrate can be loaded, but residual oxide or organic layers remain on the metal surface promoting hillock formation
Solution Approach 1:
Instead of loading the substrate into an empty chamber, the invention performs preliminary action by generating reactive species in the chamber first. These reactive species are present when the substrate is introduced, automatically cleaning residual oxide or organic layers from the metal surface without requiring separate preprocessing steps
Solution Approach 2:
Reactive species act as an intermediary between the deposition chamber environment and the substrate surface. These species mediate the cleaning process by chemically reacting with and removing contaminant layers, enabling smooth metal deposition without direct mechanical or chemical contact during substrate loading
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces the formation of hillocks on metal interconnects, improving the yield and reliability of integrated circuits by ensuring a smoother surface and preventing short circuits.
Implementation Method 1
generating reactive species produced from a source gas in the presence of a plasma
Implementation Method 2
generating reactive species produced from a source gas in the presence of a plasma
Data Source
AI summary
A method of fabricating an interconnect structure, comprising exposing an empty deposition chamber to a process that includes generating reactive species produced from a source gas in the presence of a plasma. The method further comprises terminating the plasma and then introducing a semiconductor substrate with a metal layer thereon into the chamber while the reactive species are present in the chamber.