Interconnect Insert Layer for Dielectric Support
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Solution Overview
Problem
Current low-k dielectric materials used in semiconductor manufacturing lack ideal hardness and strength, leading to unbalanced stresses during patterning processes, which cause deformation and critical dimension mismatch issues in interconnect structures, affecting the integrity and efficiency of signal propagation in semiconductor devices.
Innovation Solution
Incorporating an insert layer with higher hardness and K-value than the low-k dielectric layer to provide structural support, reducing the impact of unbalanced stresses and maintaining low capacitance, thereby stabilizing the interconnect structure and improving manufacturing robustness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If low-k dielectric materials are used to reduce RC delay, then parasitic capacitance is reduced, but material hardness and strength deteriorate
Solution Approach 1:
The patent employs a composite dielectric structure consisting of multiple dielectric layers with different k-values (e.g., first dielectric layer with k1, second dielectric layer with k2 where k1 < k2). This composite approach allows the structure to achieve low overall capacitance while incorporating harder materials in specific regions to provide mechanical support, thus resolving the contradiction between low capacitance and material strength.
2Loss of energy
If low-k dielectric materials are used to reduce RC delay, then parasitic capacitance is reduced, but structural stability deteriorates
Solution Approach 1:
The patent applies local quality by assigning different dielectric materials with different properties to different regions of the interconnect structure. Specifically, harder dielectric materials are placed in regions requiring structural support (such as beneath trenches or in stress-prone areas), while softer low-k materials are used in regions where low capacitance is critical. This spatial differentiation resolves the contradiction between structural stability and low RC delay.
3Loss of energy
If low-k dielectric materials are used, then capacitance is reduced, but stress balance during patterning deteriorates, causing deformation
Solution Approach 1:
The patent uses counterbalancing stress management by strategically placing dielectric layers with different mechanical properties to offset stress imbalances. Harder dielectric layers are positioned to provide counter-support in regions where soft low-k materials would otherwise deform under patterning stresses. This counterbalancing approach maintains stress equilibrium while preserving the low-capacitance benefits of low-k materials.
Data Source
AI summary
A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for surrounding dielectric layers. The insert layer may be applied between two dielectric layers. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.