Middle-of-Line Interconnect Layout for Leakage and Capacitance Isolation
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Solution Overview
Problem
In the manufacturing of integrated circuits, current leakage and parasitic capacitance become significant issues as the distances between contacts and interconnect features shrink, affecting device performance and reliability.
Innovation Solution
The implementation of a recessed gate electrode with a gate capping layer and a recessed source/drain contact with a source/drain capping layer, both made of dielectric materials with a low dielectric constant, to isolate and protect the conductive features, thereby reducing current leakage and parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If contacts and interconnect features are placed closer together to increase device density, then device integration is improved, but current leakage and parasitic capacitance increase
Solution Approach 1:
A dielectric layer is introduced as an intermediary material between adjacent conductive contacts and interconnect features. This dielectric layer acts as a mediator that electrically isolates the conductive elements from each other, preventing current leakage paths and reducing parasitic capacitance between neighboring features, thereby enabling higher device integration without the harmful effects of close spacing
Solution Approach 2:
The patent applies different dielectric materials with specific properties (low dielectric constant) in specific locations between conductive features. By locally optimizing the dielectric material properties in the regions where current leakage and parasitic capacitance are most problematic, the invention achieves effective electrical isolation and reduced parasitic effects while maintaining overall device performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces current leakage and parasitic capacitance, improving the reliability and performance of integrated circuit devices while simplifying manufacturing processes.
Implementation Method 1
both made of dielectric materials with a low dielectric constant, to isolate and protect the conductive features, thereby reducing current leakage and parasitic capacitance
Data Source
AI summary
In some embodiments, the present disclosure relates to an integrated circuit device. A transistor structure is disposed over a substrate and includes a pair of source/drain regions and a gate electrode between the pair of source/drain regions. A lower inter-layer dielectric (ILD) layer is disposed over the pair of source/drain regions and surrounds the gate electrode. The gate electrode is recessed from top of the lower ILD layer. A gate capping layer is disposed on the gate electrode. The gate capping layer has a top surface aligned or coplanar with that of the lower ILD layer.