Semiconductor Interconnect Structure With Extended Leakage Path

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Solution Overview

Problem

The miniaturization of semiconductor devices leads to increased leakage between interconnect structures due to reduced spacing, which degrades device performance.

Innovation Solution

An interconnect structure is formed using a reversed patterning process that includes a liner layer to enhance adhesion, followed by controlled etching to extend the leakage path between conductive features, minimizing the distance and reducing leakage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the spacing between interconnect structures is reduced to increase device density, then device functionality and circuit count increase, but leakage between interconnect structures increases

Engineering Contradiction:

Improvedevice densityVSAvoidleakage between interconnect structures

Core Design Contradiction:

ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent divides the interconnect structure into multiple segments by introducing mandrel features that create distinct isolated regions. The mandrels segment the conductive interconnect layer into separate segments that are electrically isolated from each other, preventing leakage while maintaining high device density.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent introduces mandrel features as intermediary elements between adjacent interconnect structures. These mandrels act as mediators that physically and electrically separate the interconnect structures, blocking leakage paths while allowing the structures to remain in close proximity for high density.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Ease of manufacture

If conventional patterning processes are used, then manufacturing simplicity is maintained, but leakage paths remain short between adjacent conductive structures

Engineering Contradiction:

Improvepatterning process simplicityVSAvoidleakage between conductive structures

Core Design Contradiction:

Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The patent inverts the conventional patterning approach by first forming mandrel features and then using them to define the interconnect structures. Instead of directly patterning the conductive layer, the process patterns a mandrel layer first, which then serves as a template for creating isolated interconnect regions, thereby extending leakage paths while maintaining manufacturing simplicity.

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The patent performs preliminary action by forming the mandrel layer and mandrel features before creating the conductive interconnect structures. This preliminary patterning step establishes the isolation geometry in advance, ensuring that leakage paths are extended before the conductive materials are deposited and patterned.

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS20260068620A1Semiconductor interconnection structure and methods of forming the same

Publication Date: 2026.03.05 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

An interconnection structure includes a first interconnection layer and a second interconnection layer. The first interconnection layer includes a conductive feature extending through a first dielectric layer. The second interconnection layer includes a metal contact and at least one conductive structure extending through a second dielectric layer formed over the first interconnection layer. The metal contact is configured to overlay and interconnect with the conductive feature. A portion of the conductive feature closest to the conductive structure is recessed with a depth a from a top surface of the conductive feature.