Interconnect Structure for Integrated Capacitor and Resistor Formation
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Solution Overview
Problem
Existing processes for manufacturing passive components in semiconductor integrated circuits, such as capacitors and resistors, are inadequate as device scaling-down continues, leading to increased complexity and manufacturing challenges.
Innovation Solution
The integration of passive components like capacitors and resistors within the same interconnect structure using a shared intermetal dielectric layer, where these components are formed using the same patterning processes, reducing manufacturing complexity and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If existing separate processes are used to manufacture passive components (capacitors and resistors), then manufacturing precision and component performance can be maintained, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent merges the manufacturing processes for capacitors and resistors into a single integrated process. Both passive components are formed simultaneously within the same interconnect structure using shared patterning steps and a common intermetal dielectric layer, eliminating the need for separate manufacturing processes while maintaining component precision
Solution Approach 2:
The interconnect structure is designed to serve multiple functions: it provides electrical interconnections and simultaneously hosts both capacitor and resistor passive components. The same intermetal dielectric layer and patterning processes are used universally for both component types, reducing overall device complexity
2Ease of manufacture
If passive components are integrated within the same interconnect structure, then manufacturing cost and process complexity are reduced, but manufacturing precision and component performance may be compromised
Solution Approach 1:
The patent applies local quality by providing different thicknesses of the intermetal dielectric layer in different regions: a first thickness in the capacitor region and a second thickness (5-20 times greater) in the resistor region. This localized variation ensures precise control over component characteristics while maintaining the benefits of an integrated manufacturing process
Solution Approach 2:
The invention changes physical parameters of the intermetal dielectric layer (thickness) to optimize the performance of different passive components. By adjusting the dielectric thickness in specific regions, the patent achieves precise control over capacitor and resistor formation while using the same base manufacturing process
Data Source
AI summary
An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a first intermetal dielectric (IMD) layer disposed over a plurality of conductive features and a first passive component disposed on the first IMD layer in a first region of the substrate. The structure further includes a second passive component disposed on the first IMD layer in a second region of the substrate. The second passive component includes a first conductive layer, and the first conductive layer has a first thickness. The structure further includes a second IMD layer disposed on the first passive component in the first region and on the second passive component and a portion of the first IMD layer in the second region. The second IMD layer has a second thickness ranging from about five times to about 20 times the first thickness.