Interconnect Routing Structure for Fine-Pitch Semiconductor Packaging
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and reliable electrical connections in small packages, particularly with the increasing complexity of integrated circuits and the need for miniaturization, where existing packaging technologies struggle with warpage and connection reliability.
Innovation Solution
The use of interconnect devices with high routing density, formed using techniques like damascene and dual damascene processes, which include conductive connectors and redistribution layers to create fine-pitch electrical routing, allowing for efficient electrical connections between semiconductor dies and reducing package size and warpage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional packaging technologies are used, then package size can be reduced, but warpage and connection reliability deteriorate
Solution Approach 1:
The packaging structure is divided into multiple functional layers including substrate, underfill material, encapsulant, and wire bonds. This segmentation allows each layer to perform its specific function optimally while distributing mechanical stresses, thereby maintaining connection reliability in compact packages
Solution Approach 2:
The patent transitions from planar packaging to three-dimensional packaging by stacking semiconductor devices vertically and using wire bonds to create interlayer connections. This dimensional change enables high integration density while maintaining reliable electrical connections through the encapsulant medium
2Productivity
If integration density is increased, then functionality is improved, but manufacturing complexity increases
Solution Approach 1:
The substrate is prepared in advance with pre-formed contact pads and bonding surfaces before device assembly. The underfill material is pre-applied to the substrate, and the encapsulant is pre-positioned. These preliminary actions simplify the final assembly process and enable high integration density without proportionally increasing manufacturing complexity
Solution Approach 2:
Multiple semiconductor devices are nested within the encapsulant structure, with each device containing its own internal circuitry and interconnects. This nesting approach achieves high integration density by packing multiple functional units into a single package while using standardized manufacturing processes for each nested component
Data Source
AI summary
A device includes an interconnect device attached to a redistribution structure, wherein the interconnect device includes conductive routing connected to conductive connectors disposed on a first side of the interconnect device, a molding material at least laterally surrounding the interconnect device, a metallization pattern over the molding material and the first side of the interconnect device, wherein the metallization pattern is electrically connected to the conductive connectors, first external connectors connected to the metallization pattern, and semiconductor devices connected to the first external connectors.