Interconnect Structure With Self-Forming Barrier for Lower RC Delay

The patent applies different materials with different dielectric constants to different regions of the interconnect structure. Specifically, a first dielectric material with a first dielectric constant is used in a first region, while a second dielectric material with a second dielectric constant (lower than the first) is used in a second region. This local differentiation allows the structure to maintain high integration density while reducing parasitic capacitance in critical areas where metal features are closely spaced.

The patent changes the dielectric constant parameter of the insulating material by using two different dielectric materials with different dielectric constants. The first dielectric material has a higher dielectric constant for better signal coupling and impedance control, while the second dielectric material has a lower dielectric constant to reduce parasitic capacitance. This parameter change strategy enables simultaneous optimization of both integration density and electrical performance.

The patent implements local quality by assigning different dielectric materials to different spatial regions. The first dielectric material is placed in regions where signal integrity and impedance control are critical, while the second dielectric material with lower dielectric constant is placed in regions where parasitic capacitance contributes most to RC delay. This spatial differentiation reduces overall RC time delay while maintaining compact feature spacing for high integration density.

The patent modifies the dielectric constant parameter across different regions of the interconnect structure. By using a second dielectric material with a lower dielectric constant in specific regions, the parasitic capacitance is reduced, which directly decreases the RC time delay. This parameter change enables faster signal propagation while maintaining the reduced feature sizes necessary for high integration density.