Interconnect Layer With Thermal Dielectric and Leakage Isolation
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Solution Overview
Problem
As feature sizes in semiconductor devices decrease, thermal management becomes a critical issue due to the use of materials with low dielectric constant values, which reduce parasitic capacitance but impede thermal dissipation, leading to thermal-related reliability issues and performance deterioration.
Innovation Solution
A semiconductor device with an interconnect layer using high thermal conductive dielectric materials, such as boron arsenide or silicon carbide, applied on the semiconductor substrate to enhance thermal dissipation, combined with a dual or single damascene process for manufacturing, which includes a blocking dielectric layer to isolate conductive interconnects and prevent current leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If materials with low dielectric constant values are used to reduce parasitic capacitance, then RC delay is reduced, but thermal dissipation is impeded
Solution Approach 1:
The interconnect layer is divided into multiple segments with different dielectric materials. Low-k material is used in regions where RC delay reduction is critical, while high thermal conductivity material is used in regions where thermal dissipation is prioritized. This segmentation allows simultaneous optimization of both electrical performance and thermal management.
Solution Approach 2:
Different dielectric materials with specific properties are applied to different locations within the interconnect layer. High thermal conductivity material is strategically placed beneath or adjacent to high-density interconnect regions where heat generation is highest, while low-k material is used in other areas to minimize parasitic capacitance. This local quality approach ensures that each region's material properties match its functional requirements.
2Quantity of substance
If feature sizes are reduced to increase integration density, then more components fit on chip, but parasitic capacitance increases
Solution Approach 1:
The dielectric constant parameter of the interlayer material is changed from conventional values to low-k values. This parameter change directly reduces parasitic capacitance between closely-spaced interconnect lines, enabling higher integration density without proportionally increasing RC delay. The low-k material's reduced dielectric constant compensates for the decreased spacing between features.
3Loss of time
If low-k dielectric materials are used to reduce parasitic capacitance, then RC delay decreases, but thermal-related reliability deteriorates
Solution Approach 1:
The interconnect structure employs a composite material system combining low-k dielectric material with high thermal conductivity material. The low-k portion minimizes parasitic capacitance and RC delay, while the high thermal conductivity portion (such as diamond-like carbon or other thermally conductive materials) provides efficient heat dissipation pathways. This composite approach simultaneously addresses electrical performance and thermal reliability concerns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively dissipates heat produced in semiconductor devices, improving thermal reliability and preventing current leakage among conductive features, thereby enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
A semiconductor device with an interconnect layer using high thermal conductive dielectric materials, such as boron arsenide or silicon carbide, applied on the semiconductor substrate to enhance thermal dissipation
Implementation Method 2
combined with a dual or single damascene process for manufacturing, which includes a blocking dielectric layer to isolate conductive interconnects and prevent current leakage
Data Source
AI summary
A semiconductor device includes a substrate, a heat dissipation dielectric layer, a conductive interconnect structure, and a blocking dielectric layer. The heat dissipation dielectric layer is disposed on the substrate and has a thermal conductivity greater than 10 W/mK. The conductive interconnect structure is disposed in the heat dissipation dielectric layer. The blocking dielectric layer is disposed in the heat dissipation dielectric layer to isolate the conductive interconnect structure from the heat dissipation dielectric layer.