Semiconductor Interconnect Trench Layout to Prevent Short Circuits
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Solution Overview
Problem
The increasing density of conductive interconnection lines in semiconductor integrated circuits leads to a higher likelihood of short-circuit phenomena, which can result in performance degradation or failure of semiconductor devices.
Innovation Solution
A method is developed to form a semiconductor structure by creating a substrate with a dielectric layer and a first trench, partially filling the trench with a first filling layer, forming a second trench using a mask layer, and then removing the filling layer to expose the dielectric layer for conductive material deposition, ensuring better contact performance and structural reliability by maintaining the arrangement density and preventing excessive etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the arrangement density of conductive interconnection lines is increased, then the integration level of the semiconductor device is improved, but the risk of short-circuit between lines increases
Solution Approach 1:
The patent applies segmentation by dividing the conductive interconnection structure into multiple separate trenches (first trench and second trench) that are spatially isolated from each other. Each trench contains its own conductive line, and the dielectric layer physically separates these trenches, preventing short-circuits while maintaining high integration density through controlled routing patterns.
Solution Approach 2:
The patent uses a dielectric layer as an intermediary material filled between the conductive interconnection lines. This dielectric layer acts as an insulating barrier that prevents electrical short-circuits between adjacent conductive lines while allowing them to be positioned in close proximity for high-density interconnection.
2Ease of manufacture
If the etching process is performed without proper masking, then the manufacturing process is simplified, but excessive etching occurs causing short-circuits
Solution Approach 1:
The patent applies preliminary action by forming a mask layer on the dielectric layer before performing the etching process. This mask layer is prepared in advance with specific pattern openings that define the exact etching boundaries, ensuring that the etching process only removes dielectric material in the intended areas and prevents excessive etching that could cause short-circuits.
Solution Approach 2:
The patent implements feedback control in the etching process by using the mask layer as a real-time guide during etching. The mask layer's pattern provides continuous feedback on where etching should occur, allowing the process to self-regulate and stop automatically when the mask material is reached, thereby preventing over-etching without requiring complex external monitoring systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the risk of short-circuits and enhances the electrical properties of semiconductor structures by maintaining the arrangement density and preventing excessive etching, thereby improving the reliability and performance of semiconductor devices.
Implementation Method 1
The dielectric layer is etched by taking the first mask layer as a mask to form a second trench
Data Source
AI summary
A semiconductor structure and a method for forming the same are provided. The method for forming a semiconductor structure includes the following operations. A substrate is provided. A dielectric layer having a first trench is formed on the substrate. A first filling layer is formed for partially filling the first trench. A first mask layer having a first opening is formed on the dielectric layer. The first opening exposes the first filling layer and part of the dielectric layer. The dielectric is etched by taking the first mask layer as a mask to form a second trench. The first filling layer is removed. And, conductive materials are formed in the first trench and the second trench.